Selective Diamond Deposition for Doped p-n Junction Formation
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Solution Overview
Problem
The manufacturing of diamond-based electronics is challenging due to its high mechanical hardness and small substrate size, making it difficult to control the deposition of diamond and form desired structures such as p-n junctions and semiconductor devices.
Innovation Solution
A method using a diamond growth inhibitor (DGI) during chemical vapor deposition (CVD) to prevent the formation of unwanted diamond phases and enable selective deposition of differently doped diamond portions, allowing for the creation of voids and etched regions to form p-n junctions and semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If chemical vapor deposition is used to grow diamond, then diamond material can be deposited, but it is difficult to control the deposition to form desired structures with varying dopant concentrations
Solution Approach 1:
The substrate surface is divided into distinct regions: areas with diamond growth inhibitor patterns and areas without. This segmentation allows different diamond structures (doped vs. undoped, single-crystal vs. polycrystalline) to be grown in specific locations simultaneously, enabling precise control over where diamond deposits form and what properties they exhibit.
Solution Approach 2:
Diamond growth inhibitor patterns are deposited on the substrate surface before the diamond CVD growth process begins. This preliminary action pre-defines the regions where diamond growth will be inhibited, allowing subsequent controlled deposition of differently doped diamond portions in the non-inhibited areas, and enabling formation of voids and etched regions with precise spatial control.
2Adaptability or versatility
If diamond growth inhibitor is used to prevent unwanted diamond phases, then selective deposition is enabled, but additional process steps are required
Solution Approach 1:
The diamond growth inhibitor pattern serves multiple functions simultaneously: it acts as a mask to prevent diamond deposition in specific areas, defines regions for void formation, guides etched region creation, and enables selective growth of differently doped diamond portions. This multi-functionality reduces the need for separate process steps for each feature creation.
Solution Approach 2:
The diamond growth inhibitor acts as an intermediary material that mediates between the CVD diamond deposition process and the desired final structure. By strategically placing this inhibitor material, the process controls where diamond grows and where it doesn't, enabling complex structures to be formed through a series of controlled deposition and removal cycles.
3Adaptability or versatility
If voids and etched regions are formed to create p-n junctions, then semiconductor devices can be fabricated, but removal of diamond growth inhibitor adds complexity
Solution Approach 1:
The diamond growth inhibitor is used as a temporary sacrificial material that is deliberately removed after serving its purpose of defining growth regions. The inhibitor patterns are deposited, guide the diamond deposition process to create doped regions and voids, then are removed (discarded) to reveal the final device structure with p-n junctions and embedded features.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the controlled growth of single-crystal diamond with varying dopant concentrations, facilitating the formation of p-n junctions and semiconductor devices, and allowing for the creation of visually distinctive features like logos, while avoiding polycrystalline diamond deposition.
Implementation Method 1
A first diamond portion having a first dopant concentration is deposited using chemical vapor deposition over a growth area of the growth surface
Data Source
AI summary
A method provides a single-crystal diamond substrate having a growth surface. A diamond growth inhibitor (DGI) is positioned over a diamond inhibition area of the growth surface. A first diamond portion having a first dopant concentration is deposited using chemical vapor deposition over a growth area of the growth surface. The diamond growth inhibitor and non-diamond carbon thereon are removed.