Selective Dielectric Deposition on Metallic Surfaces Without Patterning
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Solution Overview
Problem
Current methods for forming dielectric layers on metallic surfaces are inefficient due to the need for complex patterning and etch steps, and surface properties of metallic surfaces hinder precise selective deposition.
Innovation Solution
A method involving selective passivation of metallic surfaces relative to dielectric surfaces, followed by molecular layer cyclical deposition of a passivation layer and dielectric layer, using silylating agents and vapor phase reactants like dimethylaluminum isopropoxide, to achieve precise dielectric layer formation without patterning.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If lithography and etch processes are used to form dielectric layers on metallic surfaces, then the dielectric layer can be formed with precise patterning, but the process becomes time consuming and expensive
Solution Approach 1:
The patent extracts and eliminates the lithography and etch steps from the conventional process by implementing selective deposition that directly forms dielectric layers only on metallic surfaces without requiring subsequent patterning operations
Solution Approach 2:
The patent introduces a surface passivation layer as an intermediary that enables selective deposition on metallic surfaces by modifying the surface properties, allowing the dielectric layer to be deposited selectively without complex patterning steps
2Reliability
If conventional deposition methods are used on metallic surfaces, then the dielectric layer can be formed continuously, but the surface properties of metallic surfaces prevent selective deposition
Solution Approach 1:
The patent applies local quality by passivating specific areas (metallic surfaces) with a surface passivation layer while leaving other areas (dielectric surfaces) unaffected, enabling selective deposition only where needed
Solution Approach 2:
The patent changes the surface properties of metallic surfaces through passivation, modifying the chemical and physical parameters of the surface to enable selective deposition of dielectric layers
3Productivity
If selective deposition processes are implemented, then the need for patterning steps is eliminated, but the surface properties of metallic surfaces negatively impact the selective formation
Solution Approach 1:
The patent performs preliminary action by applying a surface passivation layer to metallic surfaces before the dielectric deposition step, preparing the surface in advance to ensure selective and precise deposition
Solution Approach 2:
The surface passivation layer acts as an intermediary that mediates between the metallic surface and the dielectric deposition process, enabling selective formation without compromising precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables selective and precise formation of dielectric layers on metallic surfaces, reducing the need for complex patterning and improving selectivity, thereby enhancing efficiency and precision in semiconductor processing.
Implementation Method 1
selectively passivating the metallic surface relative to the dielectric surface
Implementation Method 2
selectively depositing a dielectric layer on the metallic surface relative to the passivation layer
Implementation Method 3
removing a native oxide from the metallic surface
Data Source
AI summary
Methods for selectively forming a dielectric layer on a metallic surface relative to a dielectric surface are disclosed. The disclosed selective formation methods include selective passivation processes, and selective deposition processes.