Selective Epitaxial Deposition via Surface Passivation
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Solution Overview
Problem
Epitaxial deposition processes in semiconductor manufacturing are time-consuming and reduce throughput, and post-deposition etching processes often require excessive material deposition to account for losses, which is undesirable.
Innovation Solution
A substrate processing apparatus and method that includes a pre-clean chamber, epitaxial deposition chamber, surface passivation chamber, and atomic layer deposition chamber, where substrates undergo pre-cleaning, epitaxial deposition of source/drain materials, surface passivation using alkyl silyl moieties, and capping layer deposition without breaking vacuum, improving deposition selectivity and reducing the need for excess material.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If epitaxial deposition processes are used to deposit source/drain materials, then highly ordered crystalline structure is achieved, but processing time increases and throughput decreases
Solution Approach 1:
The patent applies preliminary action by performing surface passivation of dielectric materials before epitaxial deposition. This pre-treatment modifies the dielectric surfaces to be non-reactive, preventing unwanted deposition and enabling more precise control of epitaxial growth. By preparing the surfaces in advance, the process achieves better crystalline structure quality while reducing the need for excessive material deposition and subsequent etching, thereby improving throughput.
2Manufacturing precision
If excess epitaxial material is deposited to account for etching losses, then sufficient material remains after etching, but deposition time increases and throughput decreases
Solution Approach 1:
The patent performs surface passivation as a preliminary action before epitaxial deposition. This pre-treatment of dielectric surfaces prevents unwanted material deposition during the epitaxial process, ensuring that material is deposited only where needed. Consequently, the process achieves precise material quantity control without requiring excessive deposition, reducing both deposition time and subsequent etching requirements.
Solution Approach 2:
The patent applies local quality by selectively modifying only the dielectric material surfaces through passivation, while leaving other surfaces unaffected. This localized treatment ensures that epitaxial deposition occurs precisely where intended, eliminating the need for uniform excess deposition across the entire substrate. The result is precise material quantity control with minimized deposition time.
3Manufacturing precision
If surface passivation is performed to enhance deposition selectivity, then deposition precision improves, but process complexity increases
Solution Approach 1:
The patent incorporates surface passivation as a preliminary step before epitaxial deposition. This pre-treatment enhances deposition selectivity by modifying dielectric surfaces to be non-reactive, ensuring material deposits only on intended surfaces. Although this adds a process step, it simplifies overall process control by eliminating the need for complex in-situ selectivity management during deposition, thereby improving precision without proportionally increasing complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances deposition selectivity and reduces the need for excess epitaxially deposited material, thereby improving throughput and efficiency in semiconductor processing.
Implementation Method 1
exposing a substrate comprising silicon containing device features and dielectric materials to a pre-cleaning process to remove native oxide materials from surfaces of the silicon containing device features
Implementation Method 2
source/drain materials may be epitaxially deposited on the silicon containing device features
Implementation Method 3
exposed surfaces of the dielectric materials may be passivated by depositing alkyl silyl materials on the dielectric materials
Implementation Method 4
depositing alkyl silyl materials on the dielectric materials
Implementation Method 5
A capping layer may also be deposited on the source/drain materials
Data Source
AI summary
Methods and apparatus for processing a substrate are described herein. Methods for passivating dielectric materials include forming alkyl silyl moieties on exposed surfaces of the dielectric materials. Suitable precursors for forming the alkyl silyl moieties include (trimethylsilyl)pyrrolidine, aminosilanes, and dichlorodimethylsilane, among others. A capping layer may be selectively deposited on source/drain materials after passivation of the dielectric materials. Apparatus for performing the methods described herein include a platform comprising a transfer chamber, a pre-clean chamber, an epitaxial deposition chamber, a passivation chamber, and an atomic layer deposition chamber.