Selective Epitaxy Optical Components With Smooth Sidewalls

Resolve Bottlenecks,
Find Innovative Solutions
Generate Solutions

Solution Overview

Problem

Current state-of-the-art photonic integrated circuit (PIC) components in III-Nitrides are fabricated using subtractive fabrication steps like dry etching, which introduce etch-induced defects and side wall roughness, limiting their performance and design options.

Innovation Solution

The method involves using selective area epitaxy to fabricate optical components, where a mask material is deposited and patterned on a substrate compatible with crystalline growth. The mask material is either removed or annealed to reduce sidewall roughness, allowing for the selective growth of crystalline optical materials to form high-quality optical components with smooth side walls and extreme aspect ratios.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If subtractive fabrication steps like dry etching are used to fabricate PIC components, then manufacturing precision can be achieved, but etch-induced defects and side wall roughness are introduced, worsening the quality of optical components

Engineering Contradiction:
Improvefabrication precisionVSAvoidetch-induced defects and side wall roughness
Core Design Contradiction:
Manufacturing precisionVSObject-generated harmful factors

Solution Approach 1:

The patent inverts the conventional subtractive fabrication approach by using additive selective area epitaxy growth. Instead of etching away material to form optical components, the method grows crystalline optical material selectively in desired regions to directly form high-quality components with smooth side walls and extreme aspect ratios, eliminating etch-induced defects entirely

Inventive Principle:
Principle #13The other way round (Inversion)

Solution Approach 2:

The patent replaces the mechanical/chemical etching process with a thermal field-based epitaxial growth process. By using controlled temperature fields and vapor-phase deposition, the method achieves precise material deposition without the mechanical stress and chemical damage associated with dry etching, producing defect-free optical components

Inventive Principle:
Principle #28Mechanics substitution (Replace mechanical system)

2Manufacturing precision

If mask material is patterned to define optical component regions, then manufacturing precision is improved, but sidewall roughness of the mask material increases, worsening the quality of grown components

Engineering Contradiction:
Improvepattern definition accuracyVSAvoidsidewall roughness
Core Design Contradiction:
Manufacturing precisionVSShape

Solution Approach 1:

The patent applies preliminary annealing treatment to the patterned mask material before the epitaxial growth step. This pre-treatment smooths the sidewalls of the mask structures, ensuring that when the crystalline optical material grows selectively in the exposed regions, it inherits smooth boundaries and produces high-quality optical components without sidewall roughness

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent changes the physical-chemical parameters of the mask material through temperature annealing. By controlling the annealing temperature and atmosphere, the mask material's sidewall surface energy and crystal structure are optimized, transforming rough sidewalls into smooth surfaces that guide the epitaxial growth of optical components with excellent surface quality

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach enables the fabrication of high-quality PIC components with low losses, smooth side walls, and extreme aspect ratios, overcoming the limitations of etching-induced defects and side wall roughness, thus enhancing the performance and design flexibility of III-Nitride PIC components.

Implementation Method 1

The crystalline optical material is selectively grown in the one or more regions to form the one or more optical components

Methodology Applied
Scientific EffectEpitaxial growth: Epitaxy

Implementation Method 2

The mask material is temperature annealed to reduce sidewall roughness of the mask material surrounding the voids

Methodology Applied
Scientific EffectAnnealing: Annealing

Data Source

PatentUS12282189B2Forming optical components using selective area epitaxy
Publication Date: 2025.04.22 GENESEE VALLEY INNOVATIONS LLC
  • US12282189B2 patent drawing
  • US12282189B2 patent drawing
  • US12282189B2 patent drawing

AI summary

A mask material is deposited on a substrate or growth template. The substrate or growth template is compatible with crystalline growth of a crystalline optical material. Patterned portions of the mask material are removed to expose one or more regions of the substrate or growth template. The one or more regions have target shapes of one or more optical components. The crystalline optical material is selectively grown in the one or more regions to form the one or more optical components.