Selective Semiconductor Etching Using Surface Inhibitor Adsorption
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Solution Overview
Problem
Existing methods struggle to selectively etch specific regions in semiconductor manufacturing processes, particularly when different films have varying etching rates.
Innovation Solution
A method involving the adsorption of an inhibitor onto a second surface, followed by the application of first and second halogen element-containing gases, which selectively etches the first surface by controlling the etching rate through the use of a processing apparatus with controlled gas supply and vacuum systems.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a cycle of supplying different types of gases is performed to etch a film, then the film etching process can be completed, but it becomes difficult to selectively etch a certain region
Solution Approach 1:
The patent applies preliminary action by forming an inhibitor film on the second surface before performing the etching process. This pre-formed protective layer prevents etching on regions where the inhibitor is deposited, enabling selective etching of only the first surface while preserving specific regions. The inhibitor film is formed in advance through gas supply that adsorbs the inhibitor onto the second surface, creating a protective barrier before the actual etching begins.
Solution Approach 2:
The patent implements local quality by creating different surface properties on different regions of the object. The inhibitor film is selectively formed on the second surface through controlled gas supply, giving that region different chemical properties compared to the first surface. This local differentiation allows the etching process to affect only specific regions, achieving spatially selective etching where the first surface is etched while the second surface remains protected in certain areas.
2Manufacturing precision
If different halogen element-containing gases are supplied to etch the first surface, then the etching rate can be controlled, but the process complexity increases
Solution Approach 1:
The patent applies parameter changes by utilizing different halogen element-containing gases with distinct etching characteristics. By selecting gases with different reactivity levels and etching rates, the process can precisely control the etching speed and depth on the first surface. The first and second halogen element-containing gases have different properties that allow independent control of etching parameters, enabling fine-tuned manipulation of the etching process to achieve desired precision without requiring overly complex equipment.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the selective etching of specific regions by preferentially removing the first film while minimizing the etching of the second film, enhancing precision in semiconductor manufacturing.
Implementation Method 1
adsorbing an inhibitor onto a second surface of an object by supplying the inhibitor to the object
Implementation Method 2
supplying a first halogen element-containing gas to the first surface; supplying a second halogen element-containing gas to the first surface; removing at least a part of the first surface by performing (b) and (c) N times
Data Source
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AI summary
It is possible to possible to selectively etch a specific region. There is provided a technique that includes: (a) adsorbing an inhibitor onto a second surface of an object by supplying the inhibitor to the object, wherein the object is provided with a first surface and the second surface; (b) supplying a first halogen element-containing gas to the first surface; (c) supplying a second halogen element-containing gas to the first surface; and (d) removing at least a part of the first surface by performing (b) and (c) N times.