Selective Semiconductor Etching Using Inhibitor-Protected Surfaces

Resolve Bottlenecks,
Find Innovative SolutionsGenerate Solutions

Solution Overview

Problem

Existing methods face difficulties in selectively etching specific regions of a substrate during semiconductor device manufacturing, particularly when different films have varying etching rates.

Innovation Solution

A method involving the adsorption of an inhibitor onto a second surface, followed by the supply of first and second halogen element-containing gases, which selectively etches the first surface by controlling the etching rate through multiple cycles.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a cycle of supplying different types of gases is performed to etch a film, then the film etching is achieved, but it is difficult to selectively etch a certain region

Engineering Contradiction:

Improveselective etching precisionVSAvoidetching process complexity

Core Design Contradiction:

Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The inhibitor is supplied in advance to adsorb onto the second surface (film) before the etching gases are introduced. This preliminary action creates a protective layer that prevents unwanted etching of the second film while allowing selective etching of the first film, thereby achieving region-selective etching without complex process adjustments

Inventive Principle:

Principle #10Preliminary action

Solution Approach 2:

An inhibitor substance is introduced as an intermediary between the etching gases and the second film. The inhibitor adsorbs onto the second film surface, acting as a protective mediator that prevents the etching gases from reacting with the second film, thus enabling selective etching of only the first film

Inventive Principle:

Principle #24Intermediary (Mediator)

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

This approach allows for the selective etching of a specific film without affecting adjacent films, improving the precision and efficiency of semiconductor manufacturing processes.

Implementation Method 1

adsorbing an inhibitor onto a second surface of an object by supplying the inhibitor to the object

Methodology Applied

Scientific EffectAdsorption: Adsorption

Implementation Method 2

supplying a first halogen element-containing gas to the first surface; supplying a second halogen element-containing gas to the first surface; removing at least a part of the first surface by performing (b) and (c) N times

Methodology Applied

Scientific EffectChemical etching: Chemical Bonding

Data Source

PatentUS20250308920A1Processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and processing apparatus

Publication Date: 2025.10.02 KOKUSAI DENKI KK

AI summary

It is possible to possible to selectively etch a specific region. There is provided a technique that includes: (a) adsorbing an inhibitor onto a second surface of an object by supplying the inhibitor to the object, wherein the object is provided with a first surface and the second surface; (b) supplying a first halogen element-containing gas to the first surface; (c) supplying a second halogen element-containing gas to the first surface; and (d) removing at least a part of the first surface by performing (b) and (c) N times.