Selective Semiconductor Film Deposition via Adsorption Layer Sequencing
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Solution Overview
Problem
The challenge in semiconductor device manufacturing is the difficulty in forming a precise adsorption-inhibiting layer on specific bases, which hinders the selective growth of films, leading to increased costs and complexity due to the need for repeated high-precision patterning processes.
Innovation Solution
A technique involving the sequential formation of adsorption-inhibiting and adsorption-promoting layers on a substrate, using different precursors to selectively grow a film on a desired base by adsorbing molecular structures, allowing for precise control of film formation on one base while inhibiting growth on another.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If an adsorption-inhibiting layer is formed on a base where film growth is not desired, then selective film formation is enabled, but it is difficult to form the adsorption-inhibiting layer on the surface of the specific base
Solution Approach 1:
The patent introduces an adsorption-promoting layer as an intermediary substance formed on the base where film growth is desired. This intermediary layer selectively promotes the adsorption of the film-forming substance, enabling selective film formation without requiring direct formation of an adsorption-inhibiting layer on the unwanted base. The intermediary approach converts the difficult task of selective inhibition into an easier task of selective promotion.
2Manufacturing precision
If repeated high-precision patterning processes are used to achieve fine and complicated processing, then processing precision is improved, but manufacturing costs increase
Solution Approach 1:
The patent applies preliminary action by forming the adsorption-promoting layer before the film formation process. This pre-prepared layer ensures that subsequent film deposition occurs selectively on the desired base, eliminating the need for multiple repeated patterning processes. The preliminary preparation enables single-step selective film formation, reducing both process complexity and manufacturing costs while maintaining high precision.
3Manufacturing precision
If repeated high-precision patterning processes are used to achieve fine and complicated processing, then processing precision is improved, but processing time and costs increase
Solution Approach 1:
By forming the adsorption-promoting layer in advance as a preliminary action, the patent enables selective film formation to be achieved in a single deposition process rather than through multiple repeated patterning steps. This dramatically reduces processing time and increases throughput while maintaining the required high precision for fine and complicated semiconductor structures.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables selective film formation on the desired base while preventing film growth on the undesired base, reducing processing time and improving throughput by canceling the adsorption-inhibiting action of the first layer with a film-forming substance, thus enhancing precision and reducing costs.
Implementation Method 1
forming a first adsorption-inhibiting layer by adsorbing at least a portion of a molecular structure of molecules constituting a first precursor on a surface of a first base
Implementation Method 2
forming an adsorption-promoting layer on a surface of the second base by supplying a reactant to the substrate
Implementation Method 3
forming a second adsorption-inhibiting layer by adsorbing at least a portion of a molecular structure of molecules constituting a second precursor on a surface of the adsorption-promoting layer
Data Source
AI summary
There is provided a technique that includes (a) forming a first adsorption-inhibiting layer by adsorbing at least a portion of a molecular structure of molecules constituting a first precursor on a surface of a first base by supplying the first precursor to a substrate including the first base and a second base on a surface of the substrate, (b) forming an adsorption-promoting layer on a surface of the second base by supplying a reactant to the substrate, (c) forming a second adsorption-inhibiting layer by adsorbing at least a portion of a molecular structure of molecules constituting a second precursor on a surface of the adsorption-promoting layer by supplying the second precursor, which is different in molecular structure from the first precursor, to the substrate, and (d) forming a film on the surface of the first base by supplying a film-forming substance to the substrate subjected to (a), (b), and (c).