Selective Film Growth via Surface Modification and Precursor Control
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor device manufacturing, selective growth processes face challenges with selection loss due to incomplete surface modification, leading to unwanted film growth on modified surfaces, which reduces selectivity and increases processing time, thereby lowering productivity.
Innovation Solution
A technique involving the modification of substrate surfaces using a modifying gas followed by selective film formation with a precursor gas under conditions that prevent thermal decomposition, where the precursor gas contains a compound with multiple atoms of the first element and an interposed second element, ensuring precise control over film formation on specific bases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If selective growth is continuously performed for a predetermined time, then film formation on the desired base is achieved, but selection loss occurs leading to unwanted film growth on the modified surface
Solution Approach 1:
The patent applies preliminary action by performing surface modification before the selective growth process. The modified surface is prepared in advance with specific properties that prevent film formation during the subsequent growth process. This preliminary preparation ensures that when the precursor gas is supplied, film growth occurs only on the unmodified base surface, eliminating selection loss and maintaining high selectivity throughout the continuous growth process.
2Manufacturing precision
If selection loss occurs, then additional etching and re-modification steps are needed, but processing time increases lowering productivity
Solution Approach 1:
The patent performs surface modification as a preliminary step before selective growth, creating a stable modified surface that prevents film formation throughout the entire growth process. This preliminary action eliminates the need for subsequent etching and re-modification steps that would otherwise be required to correct selection loss, thereby maintaining high productivity while achieving the desired selectivity.
Solution Approach 2:
The patent enables continuous selective growth without interruption or additional processing steps by establishing proper surface conditions beforehand. The modified surface maintains its properties throughout the continuous growth process, allowing the useful action of film formation to proceed continuously on the desired base without being interrupted by corrective steps, thus maintaining high throughput.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances selectivity and productivity by preventing film growth on undesired surfaces and allowing high deposition rates on targeted surfaces, simplifying the manufacturing process and reducing costs.
Implementation Method 1
modifying a surface of a first base exposed on a surface of a substrate by supplying a modifying gas to the substrate
Implementation Method 2
a film-forming reaction by thermal decomposition of the precursor gas
Implementation Method 3
selectively forming a film containing at least a first element and a second element different from the first element on a surface of the second base by supplying a precursor gas
Data Source
AI summary
There is provided a technique that includes: modifying a surface of first base exposed on a substrate by supplying modifying gas including the first base and second base exposed on the substrate; and selectively forming a film containing at least first element and second element different from the first element on a surface of the second base by supplying precursor gas to the substrate after the surface of the first base is modified, under condition that film-forming reaction by thermal decomposition of the precursor gas does not substantially occur, the precursor gas containing a compound in which atoms of the first element are contained in one molecule, at least one atom of the second element is interposed between two atoms of the first element, and each of the two atoms of the first element is directly bonded to one of the at least one atom of the second element.