Selective Film Growth Sequencing for Semiconductor Substrates
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
In semiconductor device manufacturing, selective growth processes face productivity issues due to selective breakage, leading to prolonged processing times and reduced throughput as films unintentionally grow on surfaces where they are not intended, requiring etching and surface modification to correct.
Innovation Solution
A technique involving surface modification of substrates using modifying gases, followed by selective film formation and etching with fluorine-containing gases to control film growth on specific bases, optimizing processing sequences to prevent unwanted film formation and enhance productivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If selective growth is continuously performed for a predetermined period of time, then film formation on the intended base is completed, but selective breakage occurs causing film to grow on the surface of the base on which film growth is not intended
Solution Approach 1:
The patent applies preliminary action by performing surface modification of the first base before the selective film formation process. This pre-treatment creates a surface state that prevents film growth on the first base during subsequent selective growth, ensuring that film forms only on the intended second base even when growth is continuously performed for extended periods.
Solution Approach 2:
The patent utilizes parameter changes by altering the surface properties of the first base through modification with specific gases. This changes the surface energy and chemical composition, making the first base incompatible with film formation while keeping the second base suitable for selective film growth, thereby maintaining selectivity throughout the process.
2Manufacturing precision
If etching and remodification are performed to correct selective breakage, then film growth selectivity is restored, but processing time is prolonged reducing throughput productivity
Solution Approach 1:
The patent applies preliminary action by performing surface modification of the first base before the selective film formation process. This pre-treatment creates a surface state that prevents film growth on the first base during subsequent selective growth, ensuring that film forms only on the intended second base even when growth is continuously performed for extended periods.
Solution Approach 2:
The patent maintains continuity of useful action by designing a process where the surface modification is performed once at the beginning, and the selective film formation can then proceed continuously without interruption for correction steps. The modified surface maintains its properties throughout the film formation process, allowing uninterrupted production.
3Manufacturing precision
If surface modification is performed before selective growth, then film growth selectivity is improved, but additional processing steps are required increasing process complexity
Solution Approach 1:
The patent applies merging by combining the surface modification step with the existing selective growth process flow. The modification is integrated as a preparatory step that enables the subsequent selective film formation to proceed effectively, merging multiple functions into a coordinated process sequence rather than adding entirely separate correction steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the manufacturing process, improves selectivity in film growth, reduces processing time, and lowers costs by preventing unintended film formation and allowing for efficient etching and remodification under unified conditions.
Implementation Method 1
modifying a surface of a first base exposed on a surface of a substrate by supplying a modifying gas to the substrate including the first base and a second base exposed on the surface of the substrate
Implementation Method 2
etching the first film formed on the surface of the first base to expose the surface of the first base and remodifying the surface of the first base by supplying a first fluorine-containing gas to the substrate
Data Source
AI summary
There is provided a technique that includes: (a) modifying a surface of a first base exposed on a surface of substrate by supplying modifying gas to the substrate including the first base and a second base exposed on the surface of the substrate; (b) selectively forming a first film on a surface of the second base by supplying first film-forming gas to the substrate after performing (a); (c) etching the first film formed on the surface of the first base to expose the surface of the first base and remodifying the surface of the first base by supplying first fluorine-containing gas to the substrate after the first film is formed on the surface of the first base after performing (b); and (d) selectively forming a second film on the first film formed on the surface of the second base by supplying second film-forming gas to the substrate after performing (c).