Selective Epitaxial Film Growth via Surface Modification
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Solution Overview
Problem
The miniaturization of large-scale integrated circuits (LSIs) poses challenges in selectively exposing resist to separate etching and non-etching regions, making it difficult to apply patterning techniques effectively, particularly with the use of hard masks, leading to issues in selectively growing epitaxial films like silicon or silicon germanium on substrates.
Innovation Solution
A technique involving the modification of a substrate's surface using a modifying gas containing an inorganic ligand, followed by selective film growth on a specific surface using a deposition gas, is employed. This involves using a substrate processing apparatus with distinct process chambers for surface modification and film formation, utilizing gases like WF6 and TiCl4 to achieve selective growth of films like TiN on SiN layers while avoiding deposition on SiO2 layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a hard mask or resist exposure method is used for patterning, then the patterning technique can be applied, but it becomes difficult to separate etching and non-etching regions due to miniaturization
Solution Approach 1:
The patent applies local quality by selectively modifying the surface properties of specific regions on the substrate. By controlling the surface state (e.g., through plasma treatment or chemical modification) in etching regions versus non-etching regions, the method enables selective film growth only where needed, achieving pattern separation without relying on resist exposure that fails at miniaturized dimensions
2Reliability
If conventional film growth methods are used, then films can be grown on substrates, but selective growth on specific surfaces becomes difficult due to miniaturization effects
Solution Approach 1:
The patent employs preliminary action by pre-modifying the substrate surface before film deposition. Surface preparation steps (such as plasma cleaning, chemical etching, or adsorption layer formation) are performed in advance to create distinct surface states that will selectively promote or inhibit subsequent film growth, ensuring precise spatial control of the deposited film
Solution Approach 2:
The patent utilizes parameter changes by varying surface energy, surface chemistry, or surface morphology parameters in different regions of the substrate. By controlling parameters such as surface potential, chemical composition, or roughness through preliminary treatment, the method achieves selective film growth on specific surfaces while preventing growth on others, overcoming the limitations of conventional uniform deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for precise and selective film formation on substrates, enhancing the control over film thickness and selectivity, even at high temperatures, by utilizing the repulsive properties of halogen ligands to prevent film growth on certain surfaces, thus addressing the challenges of miniaturization in semiconductor manufacturing.
Implementation Method 1
modifying a first surface of a substrate by supplying a modifying gas containing an inorganic ligand to the substrate
Implementation Method 2
selectively growing a film on the second surface by supplying a deposition gas to the substrate
Data Source
AI summary
There is provided a technique that includes: modifying a first surface of a substrate by supplying a modifying gas containing an inorganic ligand to the substrate including the first surface and a second surface different from the first surface; and selectively growing a film on the second surface by supplying a deposition gas to the substrate.