Selective Film Formation on Mixed-Base Semiconductor Surfaces
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving high selectivity during selective growth and film formation on different types of bases exposed on a substrate surface.
Innovation Solution
A method involving the sequential supply of an aminosilane-based gas to adsorb silicon on a specific base, followed by a fluorine-containing gas to modify the surface, and then a film-forming gas to form a film on the other base, using a substrate processing apparatus with controlled gas supply and temperature management.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional selective growth process is used, then film formation can be achieved, but selectivity between different bases is insufficient
Solution Approach 1:
The patent applies preliminary action by performing surface modification treatment on specific bases before the film formation process. The surface modification step prepares the bases in advance by changing their surface properties (e.g., through plasma treatment, chemical treatment, or physical treatment) to create selective adhesion characteristics. This preliminary preparation enables high selectivity during subsequent film formation without requiring complex real-time control mechanisms, thus resolving the contradiction between manufacturing precision and process complexity.
Solution Approach 2:
The patent applies local quality by creating different surface properties on different bases within the same substrate. Through selective surface modification, certain bases are treated to have high film adhesion while other bases remain untreated or are treated differently. This local differentiation of surface quality allows the film to form selectively on specific bases, achieving high manufacturing precision while maintaining relatively simple overall process structure.
2Manufacturing precision
If selective growth is performed without surface modification, then process simplicity is maintained, but film adhesion and uniformity are compromised
Solution Approach 1:
The patent incorporates surface modification as a preliminary action before film deposition. This pre-treatment step modifies the surface energy, roughness, or chemical composition of specific bases to enhance film adhesion and ensure uniform film growth. By performing this preparation in advance, the patent achieves high film quality without requiring complex in-situ control during deposition, thus balancing manufacturing precision with acceptable device complexity.
Solution Approach 2:
The patent applies parameter changes by altering surface properties (such as surface energy, chemical composition, or physical structure) through modification treatments. These parameter changes on the base surfaces create selective conditions that promote better film adhesion and uniformity on treated areas while maintaining process simplicity. The modification parameters (temperature, chemical concentration, treatment time) are optimized to achieve the desired surface characteristics without excessive process complexity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the selectivity of film formation by selectively adsorbing and modifying the surface of one base over another, ensuring uniform and controlled film growth without etching or damage, thereby improving the manufacturing process efficiency.
Implementation Method 1
supplying an aminosilane-based gas to a substrate having a surface on which a first base and a second base are exposed, to thereby adsorb silicon contained in the aminosilane-based gas on a surface of one of the first base and the second base
Implementation Method 2
supplying a fluorine-containing gas to the substrate after the silicon is adsorbed on the surface of the one of the first base and the second base, to thereby react the silicon adsorbed on the surface of the one of the first base and the second base with the fluorine-containing gas to modify the surface of the one of the first base and the second base
Implementation Method 3
supplying a film-forming gas to the substrate after the surface of the one of the first base and the second base is modified, to thereby form a film on a surface of the other of the first base and the second base
Data Source
AI summary
There is provided a technique that includes: (a) supplying a silicon- and ligand-containing gas to a substrate having a surface on a first base and second base are exposed to adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first and second base; (b) supplying a fluorine-containing gas to the substrate after the silicon is absorbed, to cause the silicon to react with the fluorine-containing gas to modify the surface to be F-terminated; and (c) supplying a film-forming gas to the substrate after the surface is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.