Selective Film Formation on Mixed Crystalline Substrates
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Solution Overview
Problem
Existing film formation methods struggle to selectively form films on substrates with both crystalline and non-crystalline structures, often leading to incomplete or uneven film deposition.
Innovation Solution
A method involving the formation of a liquid film on a substrate with distinct regions, followed by replacing it with crystalline and non-crystalline films based on the substrate's structure, and then selectively etching one of these films to achieve precise film deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a conventional film formation method is used on a substrate with mixed crystalline and non-crystalline regions, then the film formation process is simple, but the film deposition is incomplete or uneven
Solution Approach 1:
The substrate surface is segmented into crystalline regions and non-crystalline regions, and the film formation process is segmented into multiple steps with different treatments for each region type. This allows selective film deposition on each region type while maintaining overall process control.
Solution Approach 2:
Different film formation conditions are applied to different regions of the substrate. Crystalline regions receive one type of treatment while non-crystalline regions receive another, ensuring optimal film quality for each region type rather than using a uniform approach.
2Manufacturing precision
If selective film formation is attempted on crystalline and non-crystalline regions, then film uniformity is improved, but the process complexity increases
Solution Approach 1:
The substrate surface is pre-prepared with specific characteristics in crystalline and non-crystalline regions before film deposition. This preliminary surface preparation enables subsequent selective film formation without requiring complex real-time control during the deposition process.
Solution Approach 2:
The film formation process utilizes changes in physical or chemical parameters (such as temperature, pressure, or chemical composition) to achieve selective deposition on different region types. By controlling parameter transitions, the process achieves selectivity while managing complexity.
3Manufacturing precision
If intermediate films and self-organized monomolecular films are used for selective film formation, then film selectivity is achieved, but the number of process steps increases
Solution Approach 1:
The invention extracts or removes the intermediate film and self-organized monomolecular film steps from the conventional process, replacing them with a more direct selective film formation approach that achieves the same selectivity without the additional process steps.
Solution Approach 2:
Instead of using complete intermediate film formation and monomolecular film self-assembly, the invention applies a partial or reduced version of these processes, achieving sufficient selectivity with less extensive treatment and fewer steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables selective and controlled film formation on substrates with mixed crystalline and non-crystalline regions, ensuring uniformity and adherence to the substrate's structure.
Implementation Method 1
replacing the liquid film on the first region with a first film of the crystalline structure, and replacing the liquid film on the second region with a second film of the non-crystalline structure
Data Source
AI summary
A film formation method includes (A) to (D) as follows: (A) preparing a substrate including a first region with a crystalline structure and a second region with a non-crystalline structure, which are defined on a surface of the substrate; (B) forming a liquid film to cover the first region and the second region; (C) replacing the liquid film on the first region with a first film of the crystalline structure, and replacing the liquid film on the second region with a second film of the non-crystalline structure; and (D) selectively etching one of the first film and the second film with respect to a remaining one of the first film and the second film.