Selective Film Formation Using SAM-Assisted Volatile Removal
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Solution Overview
Problem
Current selective film formation methods in semiconductor device manufacturing face challenges in achieving precise control over film thickness and productivity due to imperfect self-assembled monolayer (SAM) performance, leading to incomplete or uneven oxide film formation on insulating films.
Innovation Solution
A film formation method involving the use of a self-assembled monolayer with an alkyl group and no fluorine, which prevents the formation of a third film on a first film, and subsequent energy application to remove the third film's nuclei, forming a volatile compound with hydrogen and carbon, thereby improving the productivity of semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a self-assembled monolayer is formed to prevent film formation on specific regions, then selective film formation is achieved, but incomplete or uneven oxide film formation occurs on insulating films
Solution Approach 1:
The patent applies preliminary action by forming the self-assembled monolayer on the first film before the film formation process. This SAM serves as a pre-established protective barrier that prevents the third film from forming on the first film during subsequent processing steps, ensuring selective film formation is achieved in advance.
Solution Approach 2:
The self-assembled monolayer acts as an intermediary substance between the first film and the third film. It mediates the interaction by providing a chemical barrier that prevents direct contact and reaction between the third film precursors and the first film surface, thereby enabling selective film formation without compromising oxide film completeness on the second film.
2Measurement precision
If photolithography is used for selective film formation, then alignment accuracy is achieved, but alignment accuracy becomes insufficient for miniaturized devices
Solution Approach 1:
The patent replaces the photolithography mechanical/optical system with a chemical self-assembly system. Instead of using light exposure and photoresist patterns to achieve selective film formation, the invention uses the spontaneous self-assembly of molecules into monolayers on specific film surfaces, eliminating alignment issues associated with photolithography while enabling precise selective film formation for miniaturized devices.
3Productivity
If selective film formation is implemented without photolithography, then productivity is improved, but control over film thickness and uniformity deteriorates
Solution Approach 1:
The patent applies local quality by creating different surface properties on different regions of the substrate through selective SAM formation. The first film region has a SAM-covered surface that repels third film precursors, while the second film region has an exposed surface that readily accepts third film deposition. This local differentiation enables precise control over where the third film forms and at what thickness, maintaining manufacturing precision while improving productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables rapid and precise formation of a third film with desired thickness on insulating films, enhancing the productivity of semiconductor devices by preventing unwanted film formation on the first film and maintaining the integrity of the oxide film on the second film.
Implementation Method 1
a self-assembled monolayer is formed on the first film by supplying, onto the substrate, a compound for forming the self-assembled monolayer
Implementation Method 2
a self-assembled monolayer is formed on the first film by supplying, onto the substrate, a compound for forming the self-assembled monolayer
Implementation Method 3
the third film formed in a vicinity of the self-assembled monolayer is removed by applying energy to the surface of the substrate. Further, the third film is a film that is more likely than the first film to combine with hydrogen and carbon contained in the self-assembled monolayer to form a volatile compound
Data Source
AI summary
A film formation method of selectively forming a film on a substrate includes: a preparation process of preparing the substrate having a first film and a second film exposed on a surface thereof; a first film formation process of forming a self-assembled monolayer on the first film by supplying, onto the substrate, a compound for forming the self-assembled monolayer that has a functional group not containing fluorine and containing an alkyl group and prevents formation of a third film; a second film formation process of forming the third film on the second film; and a first removal process of removing the third film formed in a vicinity of the self-assembled monolayer by applying energy to the surface, wherein the third film is a film that is more likely than the first film to combine with hydrogen and carbon contained in the self-assembled monolayer to form a volatile compound.