Selective Film Deposition in Trenches Using SAM Blocking Layers
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Solution Overview
Problem
The challenge in semiconductor manufacturing lies in forming thin films with precise dimensions and specific shapes, particularly on three-dimensional structures and in narrow trenches, as existing methods face difficulties in achieving precise control over film deposition and patterning.
Innovation Solution
A method involving the formation of a blocking layer using self-assembled monolayers to selectively deposit films on conductive features, allowing for precise control over film placement and preventing unwanted deposition on dielectric layers, thereby enabling the formation of semiconductor features with improved crystallinity and reduced photolithography-related misalignment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If blanket layer deposition is used to form films on three-dimensional structures, then complete coverage is achieved, but manufacturing precision and control over film placement deteriorate
Solution Approach 1:
The patent applies local quality by creating a blocking layer with spatially varying properties - hydrophobic regions on dielectric surfaces and hydrophilic regions on conductive features. This enables selective film deposition only where needed (on conductive features) while preventing deposition on dielectric layers, achieving precise film placement without blanket deposition
Solution Approach 2:
The blocking layer acts as an intermediary between the substrate and the film deposition process. By modifying surface properties of the blocking layer through self-assembled monolayers with different terminal groups (hydrophobic vs hydrophilic), the patent controls where films will deposit, enabling precise placement without direct manipulation of the film deposition process itself
2Manufacturing precision
If photolithography is used for patterning, then film patterns are formed, but misalignment and manufacturing complexity increase
Solution Approach 1:
The patent extracts the patterning function from the photolithography process and transfers it to the film deposition process itself. By using blocking layers with selective surface properties, the pattern is defined during deposition rather than requiring separate photolithography steps, eliminating misalignment issues and reducing overall process complexity
Solution Approach 2:
The blocking layer performs self-patterning through its inherent surface property variations. The hydrophobic and hydrophilic regions automatically guide film deposition to specific locations without external patterning tools, enabling the system to define its own pattern based on the underlying structure geometry
3Manufacturing precision
If films are deposited in narrow trenches, then three-dimensional features are formed, but control over film shape and dimensions deteriorates
Solution Approach 1:
The blocking layer creates local quality differences within narrow trenches by having hydrophobic regions on dielectric surfaces and hydrophilic regions on conductive features. This enables precise control over where films deposit within the confined trench space, maintaining both shape and dimensional control even in narrow geometries
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the selective deposition of films on conductive features without the need for blanket layer deposition, facilitating the creation of semiconductor features with precise dimensions and shapes, especially in narrow trenches, and improves the control over crystallinity and reduces misalignment issues.
Implementation Method 1
forming a blocking layer using self-assembled monolayers to selectively deposit films on conductive features
Implementation Method 2
selectively deposit films on conductive features, allowing for precise control over film placement and preventing unwanted deposition on dielectric layers
Data Source
AI summary
A method for manufacturing a semiconductor feature includes: alternatingly forming first and second dielectric layers on a semiconductor substrate along a vertical direction; forming multiple spaced-apart trenches penetrating the first and second dielectric layers; forming multiple support segments filling the trenches; removing the second dielectric layers to form multiple spaces; forming multiple conductive layers filling the spaces; removing the support segments to expose the conductive layers and the first dielectric layers; selectively forming a blocking layer covering the first dielectric layers outside of the conductive layers; forming multiple selectively-deposited sub-layers on the exposed conductive layers outside of the blocking layer and each connected to one of the conductive layers; forming multiple channel sub-layers on the selectively-deposited sub-layers outside of the blocking layer; removing the blocking layer; forming multiple isolation sub-layers filling the trenches; and forming multiple source/drain segments each connected to corresponding ones of the channel sub-layers.