Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving high selectivity during selective growth and film formation on different types of bases exposed on a substrate surface.
Innovation Solution
A method involving the sequential supply of an aminosilane-based gas to adsorb silicon on a specific base, followed by a fluorine-containing gas to modify the surface, and then a film-forming gas to form a film on the other base, using a substrate processing apparatus with controlled gas supply and reaction conditions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional selective growth process is used, then film formation can be achieved on substrate surface, but selectivity between different types of bases is insufficient
Solution Approach 1:
The patent applies preliminary action by first adsorbing silicon from aminosilane-based gas onto the surface of a specific base (e.g., silicon oxide) before the actual film formation step. This preliminary silicon adsorption modifies the surface properties of the first base, creating a distinct surface state that prevents subsequent film formation on this base while allowing film formation on the second base (e.g., silicon nitride), thereby achieving high selectivity.
Solution Approach 2:
The patent utilizes parameter changes by sequentially altering the chemical state of the substrate surface through different gas treatments. The surface of the first base transitions from its original state to a silicon-modified state through aminosilane exposure, then to a fluorine-modified state through fluorine-containing gas exposure. These parameter changes in surface chemistry enable selective film formation on the second base while suppressing it on the first base.
2Manufacturing precision
If selective film formation is attempted without surface modification, then process simplicity is maintained, but film uniformity and control are compromised
Solution Approach 1:
The patent implements preliminary surface modification through silicon adsorption and fluorine treatment before the main film formation process. This preliminary action ensures uniform surface properties across the substrate, which promotes uniform film growth on the second base. The controlled sequential gas supply maintains process efficiency while achieving the desired film uniformity.
3Manufacturing precision
If multiple gas supply steps are introduced to improve selectivity, then film formation control is enhanced, but process complexity increases
Solution Approach 1:
The patent achieves enhanced selectivity control through systematic parameter changes in the gas supply process. By controlling the type, sequence, and timing of gas supply (aminosilane-based gas followed by fluorine-containing gas, then film-forming gas), the process selectively modifies surface properties to enable precise control over where film formation occurs, despite the increased complexity of the gas supply system.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enhances the selectivity of film formation by selectively adsorbing and modifying the surface of one base over another, ensuring uniform and controlled film growth without etching or damage, thereby improving the manufacturing process.
Implementation Method 1
supplying an aminosilane-based gas to a substrate having a surface on which a first base and a second base are exposed, to thereby adsorb silicon contained in the aminosilane-based gas on a surface of one of the first base and the second base
Implementation Method 2
supplying a fluorine-containing gas to the substrate after the silicon is adsorbed on the surface of the one of the first base and the second base, to thereby react the silicon adsorbed on the surface of the one of the first base and the second base with the fluorine-containing gas to modify the surface of the one of the first base and the second base
Implementation Method 3
supplying a film-forming gas to the substrate after the surface of the one of the first base and the second base is modified, to thereby form a film on a surface of the other of the first base and the second base
Data Source
AI summary
There is provided a technique that includes: (a) supplying a silicon- and ligand-containing gas to a substrate having a surface on a first base and second base are exposed to adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first and second base; (b) supplying a fluorine-containing gas to the substrate after the silicon is absorbed, to cause the silicon to react with the fluorine-containing gas to modify the surface to be F-terminated; and (c) supplying a film-forming gas to the substrate after the surface is modified, to thereby form a film on a surface of the other of the first base and the second base, which is different from the one of the first base and the second base.