Selective Gallium Nitride Deposition on Hydrogen-Terminated Silicon
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Solution Overview
Problem
Current methods for forming device structures using gallium nitride are time-consuming and expensive, and lack the precision required for certain applications, due to the high cost and complexity of gallium nitride substrates and the processes involved in monolithic integration with silicon-based devices.
Innovation Solution
A method involving selective deposition of gallium nitride using a thermal cyclic process, such as atomic layer deposition, on a substrate with distinct portions of aluminum nitride and silicon, where the silicon is hydrogen or hydroxyl terminated, allowing for precise patterning and reduced steps in the process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional monolithic integration methods are used to deposit gallium nitride on silicon substrates, then device integration is achieved, but the process becomes time-consuming and expensive with reduced precision
Solution Approach 1:
The silicon substrate surface is pre-treated with hydrogen termination before gallium nitride deposition. This preliminary action modifies the surface chemistry to create selective deposition conditions, allowing gallium nitride to deposit only on desired regions while preventing deposition on hydrogen-terminated silicon areas, thereby achieving precise patterning without time-consuming lithography steps
Solution Approach 2:
The method applies different surface treatments to different regions of the substrate - hydrogen termination on silicon regions versus native oxide preservation on gallium nitride regions. This creates local quality differences that enable selective deposition, where gallium nitride deposits only on regions with appropriate surface chemistry, achieving high precision patterning
2Ease of manufacture
If traditional monolithic integration methods are used with lithography and etch techniques, then gallium nitride devices can be integrated with silicon-based devices, but the process becomes expensive and complex
Solution Approach 1:
The method extracts and removes the complex lithography and etch steps from the traditional monolithic integration process. By using selective deposition based on surface chemistry differences, the patent achieves the same patterning function without requiring photoresist coating, patterning, and etching steps, thereby simplifying the manufacturing process and reducing costs
Solution Approach 2:
The hydrogen-terminated silicon substrate performs the patterning function automatically during deposition. The surface chemistry itself guides where gallium nitride will and will not deposit, eliminating the need for external patterning tools and processes. The substrate essentially patterns itself through selective deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the formation of device structures with smaller gallium nitride features and improved precision, reducing the number of steps and costs associated with traditional methods, while maintaining high selectivity and quality of the gallium nitride layers.
Implementation Method 1
using a thermal cyclic deposition process (e.g., an atomic layer deposition process), selectively depositing gallium nitride on the first portion relative to the second portion
Implementation Method 2
selectively depositing gallium nitride on the first portion relative to the second portion
Implementation Method 3
The silicon can be hydrogen terminated
Implementation Method 4
using a thermal cyclic deposition process (e.g., an atomic layer deposition process)
Data Source
AI summary
A method of forming a device structure including a selectively-deposited gallium nitride layer is disclosed.