Selective Gate Capping via Hydrophobic Dielectric Surface Modification
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Solution Overview
Problem
In the semiconductor industry, particularly for FinFET devices, the challenge lies in forming a capping layer on gate structures that reduces contact resistance and minimizes damage to dielectric layers, especially in short channel devices where traditional methods fail to provide adequate selectivity and protection during the deposition process.
Innovation Solution
A selective deposition process is employed to form a capping layer on metallic surfaces, utilizing a surface modification treatment that renders dielectric surfaces hydrophobic, thereby improving the selectivity of the deposition and reducing damage to dielectric layers, while also forming a protective layer that enhances the deposition process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If traditional deposition methods are used to form a capping layer on gate structures, then the deposition process can be completed, but damage is caused to dielectric layers and selectivity is insufficient
Solution Approach 1:
A surface modification treatment is performed on the dielectric layer before the deposition of the capping layer. This preliminary action creates a protective layer on the dielectric surface that prevents damage during subsequent deposition processes, thereby protecting the dielectric layer while allowing the capping layer to be formed on the gate structure
Solution Approach 2:
The surface modification treatment creates an intermediary protective layer on the dielectric surface. This intermediary layer acts as a mediator between the deposition process and the dielectric layer, allowing the deposition to proceed while preventing direct damage to the dielectric layer underneath
2Manufacturing precision
If selective deposition is performed without surface modification, then the process is simpler, but selectivity between metallic and dielectric surfaces is insufficient
Solution Approach 1:
The surface modification treatment changes the physical or chemical parameters of the dielectric surface, such as surface energy, wettability, or reactivity. This parameter change creates a distinction between metallic and dielectric surfaces, enabling selective deposition on metallic surfaces while preventing deposition on modified dielectric surfaces
3Manufacturing precision
If complex masking and patterning processes are used to achieve selective capping, then selectivity can be improved, but process complexity and costs increase
Solution Approach 1:
The invention extracts and removes the need for complex masking and patterning processes by using surface modification to achieve inherent selectivity. The surface treatment creates self-selective properties on the dielectric layer, eliminating the requirement for additional masking layers and patterning steps that would otherwise be needed to achieve selective capping
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The solution effectively reduces gate resistance in short channel devices and minimizes defects and leakage through dielectric layers, offering improved process efficiency and reduced costs by avoiding complex masking and patterning processes, particularly beneficial in small technology nodes like 7 nm and smaller.
Implementation Method 1
utilizing a surface modification treatment that renders dielectric surfaces hydrophobic
Implementation Method 2
A selective deposition process is employed to form a capping layer on metallic surfaces
Data Source
AI summary
Embodiments disclosed herein relate generally to capping processes and structures formed thereby. In an embodiment, a conductive feature, formed in a dielectric layer, has a metallic surface, and the dielectric layer has a dielectric surface. The dielectric surface is modified to be hydrophobic by performing a surface modification treatment. After modifying the dielectric surface, a capping layer is formed on the metallic surface by performing a selective deposition process. In another embodiment, a surface of a gate structure is exposed through a dielectric layer. A capping layer is formed on the surface of the gate structure by performing a selective deposition process.