Selective Hard Mask Formation Using Plasma-Treated Dielectric Layers
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in achieving precise and efficient patterning of hard masks for advanced semiconductor devices due to high aspect ratios and unsatisfactory pattern formation, particularly in scaled-down technologies.
Innovation Solution
A method involving plasma treatment to modify dielectric layers, followed by selective deposition of inhibitors and self-aligned hard masks using area-selective atomic layer deposition (ASD), which allows for precise control of hard mask thickness and alignment without photolithography and etching processes.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional photolithography and etching processes are used to form hard masks, then the patterning process is established, but high aspect ratios and unsatisfactory pattern formation occur in scaled-down technologies
Solution Approach 1:
The patent introduces an inhibitor layer as an intermediary substance between the metal layer and the deposition environment. This inhibitor layer selectively prevents hard mask material deposition on specific regions (such as sidewalls) while allowing deposition on other regions (such as the top surface), thereby achieving precise pattern formation without relying on conventional photolithography and etching processes that struggle with high aspect ratios
Solution Approach 2:
The patent changes the chemical and physical parameters of the substrate surface by applying plasma treatment and inhibitor deposition. These parameter changes create distinct surface properties (reactivity, surface energy) that enable area-selective atomic layer deposition to proceed differently on various regions of the same substrate, achieving precise spatial control over hard mask formation
2Manufacturing precision
If hard mask thickness is increased to improve pattern definition, then etching performance improves, but aspect ratio problems worsen
Solution Approach 1:
The patent applies local quality by creating spatially varying properties on the substrate surface through inhibitor deposition. Different regions of the substrate receive different treatments: some regions have inhibitors that prevent deposition, while others have no inhibitors allowing full deposition. This enables the hard mask to form with appropriate thickness only where needed, improving pattern definition without uniformly increasing thickness that would worsen aspect ratio
3Manufacturing precision
If conventional deposition methods are used, then hard mask formation is achieved, but alignment precision and thickness control are insufficient
Solution Approach 1:
The area-selective atomic layer deposition process is self-aligned because the inhibitor pattern itself defines where deposition occurs. The process automatically conforms to the inhibitor geometry without requiring separate alignment steps or photolithography, achieving both precise alignment and controlled thickness through the self-directed nature of the selective deposition mechanism
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables the formation of self-aligned hard masks with controlled thickness and pattern precision, reducing aspect ratio issues and improving etching and deposition processes in scaled-down semiconductor devices.
Implementation Method 1
performing a plasma treatment to a first portion of the dielectric layer, such that a carbon concentration of the first portion of the dielectric layer is lower than a carbon concentration of a second portion of the dielectric layer
Implementation Method 2
selective deposition of inhibitors and self-aligned hard masks using area-selective atomic layer deposition (ASD)
Implementation Method 3
selective forming a hard mask over portions of the metal layer that is uncovered by the inhibitor
Data Source
AI summary
A method includes forming a metal layer over a substrate; forming a dielectric layer over the metal layer; performing a plasma treatment to a first portion of the dielectric layer, such that a carbon concentration of the first portion of the dielectric layer is lower than a carbon concentration of a second portion of the dielectric layer; selectively forming an inhibitor over the first portion of the dielectric layer; and selectively forming a hard mask over portions of the metal layer that is uncovered by the inhibitor.