Selective Metal Deposition via Metal Halide Reactants
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Solution Overview
Problem
Current integrated circuit manufacturing processes require complex steps for material deposition on semiconductor substrates, involving deposition over the entire surface followed by selective removal, which can be simplified by achieving selective deposition on metal surfaces relative to dielectric surfaces without the need for additional processing steps.
Innovation Solution
The method involves selective deposition of materials on a first metal or metallic surface of a substrate relative to a second dielectric surface, using metal halides and subsequent reactants in an atomic layer deposition process, without the need for passivation chemicals or blocking agents, allowing for precise control of material deposition on metal oxide or dielectric surfaces like SiO2.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If material is deposited over the entire substrate surface followed by selective removal, then complete coverage is achieved, but the number of process steps increases and manufacturing complexity increases
Solution Approach 1:
Instead of depositing material everywhere and then removing it selectively (conventional approach), the invention inverts the approach by depositing material selectively only where needed. The patent achieves this by using surface-specific precursor reactivity, where metal halide precursors react with metal surfaces to form reactive intermediates that enable selective deposition on metal surfaces while avoiding dielectric surfaces, thereby eliminating the need for subsequent removal steps
Solution Approach 2:
The invention applies local quality by making the deposition process surface-specific. Different surfaces (metal vs. dielectric) are treated differently at the chemical level through selective precursor adsorption and reaction. The metal halide precursor selectively adsorbs on metal surfaces and forms reactive intermediates, while dielectric surfaces remain unreactive, enabling localized deposition without requiring mask layers or subsequent etching steps
2Ease of manufacture
If selective deposition is achieved without passivation chemicals or blocking agents, then process simplicity is improved, but control over deposition selectivity becomes more challenging
Solution Approach 1:
The invention employs self-service by utilizing the inherent chemical properties of the substrate surfaces themselves to guide the deposition process. The metal surfaces automatically activate the metal halide precursors through surface-specific reactions, forming reactive intermediates that drive selective deposition. The dielectric surfaces passively resist precursor adsorption without requiring external passivation chemicals or blocking agents, allowing the process to self-regulate based on surface chemistry
Solution Approach 2:
The invention changes the chemical parameters of the deposition system by using metal halide precursors that exhibit different reactivity toward metal versus dielectric surfaces. The patent exploits the different surface chemistries (metallic vs. dielectric) to achieve selective precursor adsorption and reaction, thereby controlling deposition selectivity through inherent material properties rather than external control mechanisms
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables efficient and selective deposition of materials like NbOx on metal surfaces while minimizing deposition on dielectric surfaces, reducing processing complexity and enhancing the precision of integrated circuit fabrication.
Implementation Method 1
contacting the substrate with a metal halide reactant; removing the metal halide reactant from the reaction space
Implementation Method 2
contacting the substrate with a vapor phase reactant; removing the vapor phase reactant from the reaction space
Data Source
AI summary
Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.