Selective Metal Deposition via Surface Activation
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Solution Overview
Problem
Current integrated circuit manufacturing processes require complex steps for material deposition on semiconductor substrates, involving deposition over entire surfaces followed by selective removal, which can be simplified by achieving selective deposition on specific surfaces without the need for extensive subsequent processing.
Innovation Solution
The use of atomic layer deposition (ALD) type processes to selectively deposit materials such as metals, metal oxides, and dielectrics on one surface of a substrate relative to another, with high selectivity and retention of selectivity across multiple deposition cycles, utilizing vapor phase precursors and reactants to control surface reactions and inhibit deposition on specific surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition processes are used to deposit material over the entire substrate surface, then complete coverage is achieved, but the number of processing steps increases due to the need for subsequent selective removal
Solution Approach 1:
The invention applies local quality by treating different surfaces of the substrate differently - one surface is activated to promote deposition while the other is deactivated to inhibit deposition. This is achieved through selective surface treatment methods such as plasma treatment, chemical modification, or physical conditioning that create distinct surface properties (e.g., surface energy, reactivity) on opposite faces of the substrate, enabling material to deposit only on the activated surface during conventional deposition processes
2Productivity
If selective deposition is achieved through surface treatment, then processing steps are reduced, but deposition selectivity must be maintained across multiple cycles
Solution Approach 1:
The invention applies preliminary action by pre-treating the substrate surfaces before the deposition process to establish permanent or semi-permanent differences in surface properties. The activation treatment creates surfaces that will consistently attract deposited material, while deactivation treatment creates surfaces that repel or prevent deposition. This preliminary differentiation ensures that selectivity is maintained across multiple deposition cycles without requiring re-treatment, enabling high productivity through repeated use of the same substrate
Solution Approach 2:
The invention applies parameter changes by modifying surface parameters such as surface energy, chemical composition, roughness, or electrical charge to create distinct deposition characteristics. By controlling these surface parameters during treatment, the invention achieves differential deposition behavior where one surface promotes material adherence while the other prevents it, and these parameter differences remain stable throughout multiple deposition cycles
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves selective deposition with high accuracy and efficiency, allowing for the formation of capping, barrier, or sealing layers with high selectivity (>90%) on specific surfaces, reducing processing complexity and improving material utilization in integrated circuits.
Implementation Method 1
The use of atomic layer deposition (ALD) type processes to selectively deposit materials such as metals, metal oxides, and dielectrics on one surface of a substrate relative to another
Implementation Method 2
utilizing vapor phase precursors and reactants to control surface reactions and inhibit deposition on specific surfaces
Data Source
AI summary
Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.