Selective Metal-Containing Film Formation Through Surface Modification

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Solution Overview

Problem

It is difficult to selectively form a metal-containing film starting from a specific region on a substrate.

Innovation Solution

A technique involving the formation of an adsorption promoting layer by supplying a halogen-containing agent, followed by an organic-containing agent, then a source material and a reactant, to selectively form a metal-containing film on the substrate.

Engineering Contradictions & Design Principles

VSEngineering Contradiction Analysis

1Manufacturing precision

If a metal-containing film is formed using conventional methods, then the film can be formed on the substrate, but it is difficult to selectively form the film starting from a specific region

Engineering Contradiction:
Improveselectivity of metal-containing film formationVSAvoidcomplexity of film formation process
Core Design Contradiction:
Manufacturing precisionVSEase of manufacture

Solution Approach 1:

The patent applies preliminary action by first forming an adsorption promoting layer on the substrate before forming the metal-containing film. This pre-treatment step modifies the substrate surface to create selective adsorption sites, enabling subsequent selective film formation in specific regions rather than uniform coverage across the entire substrate.

Inventive Principle:
Principle #10Preliminary action

Solution Approach 2:

The patent implements local quality by creating an adsorption promoting layer with spatially varying properties. The layer is formed to have different adsorption characteristics in different regions of the substrate, allowing the metal-containing film to form selectively in specific regions where the adsorption promoting layer is present, while other regions remain unaffected.

Inventive Principle:
Principle #3Local quality

2Manufacturing precision

If the film formation process is made selective to specific regions, then regional control is improved, but the process complexity increases

Engineering Contradiction:
Improveregional control of film formationVSAvoidnumber of process steps
Core Design Contradiction:
Manufacturing precisionVSDevice complexity

Solution Approach 1:

The patent uses an adsorption promoting layer as an intermediary between the substrate and the metal-containing film. This intermediate layer acts as a mediator that enables selective film formation by providing specific adsorption sites in certain regions, thereby achieving regional control without requiring complex masking or patterning processes.

Inventive Principle:
Principle #24Intermediary (Mediator)

Solution Approach 2:

The patent applies parameter changes by modifying the chemical composition and surface properties of the substrate through the adsorption promoting layer. By changing the chemical parameters of the surface (creating specific functional groups or sites), the patent enables selective adsorption and subsequent selective film formation in specific regions.

Inventive Principle:
Principle #35Parameter changes

Applied Scientific Principles

This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.

Function Achieved in This Case

Enables the selective formation of a metal-containing film from a specific region on the substrate, reducing contact resistance and promoting growth in recesses.

Implementation Method 1

forming an adsorption promoting layer capable of promoting an adsorption of an organic-containing agent on a substrate by supplying a halogen-containing agent to the substrate

Methodology Applied
Scientific EffectAdsorption: Adsorption

Implementation Method 2

forming a modification layer on the substrate by supplying the organic-containing agent to the substrate

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Implementation Method 3

supplying a source material containing a metal element to the substrate; supplying a reactant to the substrate; forming a metal-containing film by performing these steps N times

Methodology Applied
Scientific EffectChemical Vapour Deposition: Chemical Vapour Deposition

Data Source

PatentEP4636124A1Substrate processing method, method of manufacturing semiconductor device, substrate processing apparatus and program
Publication Date: 2025.10.22 KOKUSAI DENKI KK
  • EP4636124A1 patent drawingFigure 1
  • EP4636124A1 patent drawingFigure 2
  • EP4636124A1 patent drawingFigure 3~4

AI summary

It is possible to selectively form a metal-containing film starting from a specific region on a substrate. There is provided a technique that includes: (a) forming an adsorption promoting layer capable of promoting an adsorption of an organic-containing agent on a substrate by supplying a halogen-containing agent to the substrate; (b) forming a modification layer on the substrate by supplying the organic-containing agent to the substrate; (c) supplying a source material containing a metal element to the substrate; (d) supplying a reactant to the substrate; and (e) forming a metal-containing film in a region of the substrate where the modification layer is not formed, by performing (b), (c) and (d) N times after (a).