Selective Metal Oxide Deposition via Hydrolytic Blocking
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Solution Overview
Problem
Conventional techniques face challenges in selectively depositing metal oxides on metal surfaces in the presence of dielectric surfaces, particularly due to the lack of selective inhibitor molecules, which shifts techniques to non-selective masking methods.
Innovation Solution
The method involves non-selectively adsorbing a blocking reagent onto both metal and dielectric surfaces, followed by selective removal from the metal surface using water, allowing for the selective deposition of metal oxides on the metal surface relative to the dielectric surface through atomic layer deposition.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional non-selective masking methods are used, then deposition can be performed on both metal and dielectric surfaces, but selective deposition of metal oxide on metal surfaces relative to dielectric surfaces cannot be achieved
Solution Approach 1:
The blocking reagent is applied in advance to both metal and dielectric surfaces before deposition. This preliminary action creates a temporary protective layer that is subsequently selectively removed from metal surfaces through hydrolysis, enabling selective deposition without requiring complex masking structures during the deposition process itself
Solution Approach 2:
A blocking reagent serves as an intermediary substance that temporarily protects both metal and dielectric surfaces. This intermediary is then selectively removed from metal surfaces through hydrolysis, allowing the deposition process to occur only on metal surfaces while dielectric surfaces remain protected by the blocking reagent
2Manufacturing precision
If a blocking reagent is non-selectively adsorbed onto both metal and dielectric surfaces, then subsequent selective removal from metal surfaces enables selective deposition, but requires additional process steps
Solution Approach 1:
The blocking reagent on metal surfaces undergoes self-service through hydrolysis when exposed to moisture, automatically removing itself from metal surfaces without requiring additional etching chemicals or complex removal processes. This self-removing capability simplifies the overall process while maintaining high selectivity
Solution Approach 2:
The process exploits parameter changes in the blocking reagent's chemical stability - it remains stable on dielectric surfaces but undergoes hydrolysis on metal surfaces. This parameter change allows selective removal from metal surfaces while maintaining protection on dielectric surfaces, achieving selective deposition
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables selective deposition of metal oxides on metal surfaces while preventing deposition on dielectric surfaces, improving the precision and efficiency of semiconductor manufacturing processes.
Implementation Method 1
exposing the substrate to a blocking reagent to non-selectively adsorb the blocking reagent onto both the dielectric material and the exposed metal surface
Implementation Method 2
selectively removing the blocking reagent from the exposed metal surface; selectively removing the blocking reagent the substrate is performed at room temperature; Selectively removing the blocking reagent the substrate may selectively hydrolyze bonds between the blocking reagent and the exposed metal surface
Implementation Method 3
selectively depositing the metal oxide on the exposed metal surface relative to the dielectric material on the substrate using atomic layer deposition
Data Source
AI summary
Methods and apparatuses for selective deposition of metal oxides on metal surfaces relative to dielectric surfaces are provided. Selective deposition is achieved by exposing metal and dielectric surfaces to a blocking reagent capable of forming a hydrolyzable bond with metal while forming a non hydrolyzable bond with the dielectric, and dipping the surfaces in water to cleave the hydrolyzable bond and leave a blocked surface on the dielectric surface, followed by depositing metal oxide selectively on the metal surface relative to the dielectric surface. Blocking reagents are deposited by wet or dry techniques and may include an alkylaminosilane or alkylchlorosilane as examples.