Selective Molecular Layer Deposition for Controlled Organic Film Growth
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Solution Overview
Problem
There is a need for precursors and processes in molecular layer deposition that provide control over film growth, particularly for carbon-based films used in semiconductor patterning, where existing methods lack precision in controlling the deposition of organic and hybrid organic/inorganic layers.
Innovation Solution
The method involves modifying a substrate with a hydrogen-terminated surface and a hydroxyl-terminated surface using a modifying compound with a specific formula (RO)3Si-L-Si(OR)3, followed by exposure to deposition gases to form a film, where R is an alkyl group and L is an aromatic moiety or a carbon chain, allowing for controlled deposition of organic or hybrid organic/inorganic layers.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional molecular layer deposition methods are used, then carbon-based films can be deposited, but control over film growth and deposition precision is insufficient
Solution Approach 1:
The deposition process is segmented into distinct half-cycles: a surface modification half-cycle using silane precursor to create reactive sites, followed by a deposition half-cycle using the carbon-based precursor. This segmentation allows independent optimization of each step and enables precise control over film growth by controlling the number of cycles.
Solution Approach 2:
The surface modification step is performed as a preliminary action before the actual deposition. The silane precursor reacts with hydroxyl groups on the substrate surface to form alkoxy-silane groups, creating a prepared surface that enables controlled subsequent deposition of carbon-based films.
2Manufacturing precision
If selective deposition on specific substrate regions is required, then pattern formation becomes possible, but existing methods lack the capability for precise spatial control
Solution Approach 1:
The method enables local quality by allowing deposition to occur only on regions of the substrate where the modifying compound has been applied. By controlling the spatial distribution of the modifying compound (e.g., through masking or selective application), film deposition can be confined to specific patterns or regions while leaving other areas unaffected.
3Manufacturing precision
If uniform film formation is achieved through sequential precursor exposure, then film quality improves, but deposition time increases due to multiple exposure steps
Solution Approach 1:
The deposition process uses periodic action through repeated cycles of surface modification followed by deposition half-cycles. Each cycle deposits a controlled amount of material, and by adjusting the number of cycles and duration of each half-cycle, both film uniformity and total deposition time can be optimized for different application requirements.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables precise control over film growth, allowing for the formation of uniform organic or hybrid organic/inorganic layers on substrates, enhancing semiconductor patterning and film thickness control.
Implementation Method 1
exposing the substrate to a modifying compound comprising an modifying species that reacts with the hydroxyl terminated surface of the second material to form a modified second surface
Implementation Method 2
exposing the substrate to one or more deposition gases which react with the modified second surface of the second material to form a film on the second material
Data Source
AI summary
Embodiments of the disclosure relate to methods of selectively depositing organic and hybrid organic/inorganic layers. More particularly, embodiments of the disclosure are directed to methods of modifying hydroxyl terminated surfaces for selective deposition of molecular layer organic and hybrid organic/inorganic films. Additional embodiments of the disclosure relate to cyclic compounds for use in molecular layer deposition processes.