Selective Molybdenum Deposition Using Halide-Oxyhalide Sub-Cycles
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Solution Overview
Problem
The selective deposition of high-quality molybdenum films, particularly on metal surfaces relative to dielectric surfaces, is challenging due to the formation of unwanted phases and the complexity of existing deposition methods, which often require multiple processing steps and are not cost-effective.
Innovation Solution
A cyclic deposition process using molybdenum halide and oxyhalide precursors, combined with a reducing agent, is employed to selectively deposit molybdenum on metal surfaces while minimizing deposition on dielectric surfaces, utilizing a vapor phase delivery system and alternating sub-cycles to enhance selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to deposit molybdenum films, then deposition can be achieved, but unwanted phases form and selectivity is poor
Solution Approach 1:
The patent changes the chemical parameters by using molybdenum oxyhalide precursors instead of conventional molybdenum precursors, and employs a two-subcycle process (halide sub-cycle and oxyhalide sub-cycle) that alters the deposition chemistry to prevent carbide formation and improve selectivity
Solution Approach 2:
The deposition process is segmented into alternating halide sub-cycles and oxyhalide sub-cycles, where each sub-cycle performs a specific function: the halide sub-cycle prepares the surface and the oxyhalide sub-cycle deposits molybdenum, achieving both high selectivity and film quality through this divided approach
2Manufacturing precision
If selective deposition methods are used to achieve high selectivity, then the number of processing steps increases and cost-effectiveness decreases
Solution Approach 1:
The patent merges multiple functions into a single deposition process: the alternating halide and oxyhalide sub-cycles simultaneously achieve surface preparation, selective deposition, and film quality control, eliminating the need for separate processing steps while maintaining >99.5% selectivity
3Adaptability or versatility
If molybdenum is deposited on metal surfaces, then conductor material applications are enabled, but deposition on dielectric surfaces also occurs reducing selectivity
Solution Approach 1:
The deposition process exhibits local quality by responding differently to different surface types: the metal surface undergoes specific halide-oxyhalide reactions that enable selective molybdenum deposition, while dielectric surfaces do not undergo the same reactions, achieving >99.5% selectivity through surface-specific chemical behavior
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method achieves selective deposition of molybdenum with high selectivity (>99.5%) on metal surfaces relative to dielectric surfaces, reducing the need for additional processing steps and maintaining film quality.
Implementation Method 1
providing molybdenum halide precursor into the reaction chamber in a vapor phase
Implementation Method 2
The cyclic deposition process comprises a halide sub-cycle and an oxyhalide sub-cycle. The halide sub-cycle comprises providing molybdenum halide precursor into the reaction chamber in a vapor phase
Implementation Method 3
the oxyhalide sub-cycle comprises providing molybdenum oxyhalide precursor into the reaction chamber in a vapor phase and providing a reactant into the reaction chamber to deposit material comprising molybdenum on the first surface of the substrate
Data Source
AI summary
The disclosure relates to methods of selectively depositing material comprising molybdenum on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process. The methods comprise providing a substrate in a reaction chamber, and performing at least one super-cycle comprising a halide sub-cycle and an oxyhalide sub-cycle. The halide sub-cycle comprises providing molybdenum halide precursor into the reaction chamber in a vapor phase, and the oxyhalide sub-cycle comprises providing molybdenum oxyhalide precursor into the reaction chamber in a vapor phase and providing a reactant into the reaction chamber to deposit material comprising molybdenum on the first surface of the substrate. The disclosure further relates to molybdenum layer, to a semiconductor structure and a device, and to vapor deposition assemblies for selectively depositing material comprising molybdenum on a substrate.