Selective Silicon Nitride Deposition With In-Situ Densification
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Solution Overview
Problem
Current 3D-NAND manufacturing processes produce poor-quality silicon nitride films due to low temperature selective deposition, which is inadequate for forming high-quality 3D NAND cell structures.
Innovation Solution
A processing method involving pre-cleaning, exposure to a growth inhibitor, selective deposition of a silicon-containing dielectric layer, and densification within a vacuum environment in a processing tool with integrated chambers for pre-cleaning, inhibitor soaking, selective deposition, and densification, ensuring high-quality silicon-containing dielectric films are formed.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Device complexity
If selective deposition is used to eliminate patterning steps, then manufacturing complexity is reduced, but film quality deteriorates due to low deposition temperatures
Solution Approach 1:
The patent applies preliminary action by performing pre-cleaning of the substrate surface before selective deposition, and using growth inhibitors to prepare the surface in advance. This ensures that the low-temperature selective deposition process produces high-quality films by eliminating contaminants and controlling nucleation sites beforehand, thus resolving the contradiction between simplified manufacturing and film quality
Solution Approach 2:
The patent changes the deposition temperature parameter from high temperature (conventional ALD/CVD) to low temperature selective deposition, while compensating for the quality loss through post-deposition densification treatments. This parameter change enables elimination of patterning steps while maintaining film quality through subsequent processing
2Temperature
If low temperature deposition is used for selective deposition, then deposition temperature is reduced, but film density deteriorates
Solution Approach 1:
The patent implements continuous processing without breaking vacuum between deposition and densification steps. The silicon-containing dielectric layer is deposited and then immediately densified in the same vacuum environment, maintaining continuous useful action that prevents contamination and ensures high film quality despite low deposition temperature
Solution Approach 2:
The patent changes the physical state and density parameters of the deposited film through post-deposition densification treatments. The amorphous or porous low-temperature deposited film is transformed into a dense, high-quality film through controlled heating or plasma treatment, resolving the density issue while maintaining low deposition temperature
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of high-quality silicon-containing dielectric films, improving the wet etch rate and film quality, essential for advanced 3D NAND device fabrication.
Implementation Method 1
exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack
Implementation Method 2
the processing method is performed in a processing tool without breaking vacuum
Implementation Method 3
densifying the silicon-containing dielectric layer
Data Source
AI summary
Methods of manufacturing memory devices are provided. The method comprises pre-cleaning a top surface of a film stack, the film stack comprising alternating layers of a first material layer and a second material layer and having one or more of a memory hole and a slit pattern opening extending through the film stack; exposing the top surface of the film stack to a growth inhibitor; selectively depositing a silicon-containing dielectric layer in a region of the film stack; and densifying the silicon-containing dielectric layer. The processing method is performed in a processing tool without breaking vacuum.