Selective Noble Metal Deposition on Mixed Surfaces Without Lithography
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Solution Overview
Problem
Current semiconductor manufacturing techniques face challenges in achieving high selectivity during noble metal deposition, often requiring expensive multi-step lithographic processes and surface pretreatments, which can lead to pattern misalignment issues in advanced technology nodes.
Innovation Solution
A method utilizing a cyclic deposition process with a noble metal β-diketonate compound and a reactant in a vapor phase to selectively deposit noble metals on specific surfaces of a substrate, achieving high selectivity without the need for pre-treatments, by using a substrate with distinct surface materials and controlling deposition conditions in a reaction chamber.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional blanket layer deposition with photolithographic masking is used, then material can be deposited on substrate, but pattern misalignment and edge placement error occur in advanced technology nodes
Solution Approach 1:
The substrate surfaces provide self-directed selectivity through their inherent chemical differences. The first surface (e.g., dielectric material) and second surface (e.g., metal material) naturally exhibit different reactivities toward the noble metal precursor, enabling automatic pattern definition without external lithographic intervention. This self-service mechanism eliminates the need for photolithographic masking steps while achieving precise spatial control of material deposition.
Solution Approach 2:
The invention exploits local chemical quality differences between distinct substrate surfaces. By designing the substrate with a first surface comprising a dielectric material and a second surface comprising a metal material, each surface develops unique local reactivity characteristics. The noble metal precursor selectively reacts with one surface type based on its local chemical properties, enabling precise spatial control of deposition without global lithographic patterning.
2Manufacturing precision
If surface pretreatment is applied to inhibit or encourage deposition, then selectivity can be improved, but additional lithography steps are required increasing process complexity
Solution Approach 1:
The substrate surfaces provide self-directed selectivity through their inherent chemical differences. The first surface (e.g., dielectric material) and second surface (e.g., metal material) naturally exhibit different reactivities toward the noble metal precursor, enabling automatic pattern definition without external lithographic intervention. This self-service mechanism eliminates the need for photolithographic masking steps while achieving precise spatial control of material deposition.
Solution Approach 2:
The substrate is prepared in advance with distinct surface materials having predetermined chemical reactivities. The first surface is designed to be reactive toward the noble metal precursor while the second surface is designed to be non-reactive or less reactive. This preliminary configuration of surface properties enables selective deposition to occur automatically during the vapor phase reaction without requiring additional surface treatment steps.
3Manufacturing precision
If existing selective deposition methods are used, then material can be deposited selectively, but selectivity is not high enough to accomplish deposition goals
Solution Approach 1:
The invention changes the chemical parameters of the deposition system by selecting specific noble metal precursors (e.g., organometallic compounds) that exhibit strong selectivity for dielectric surfaces over metal surfaces. By adjusting the precursor chemistry and reaction conditions (temperature, pressure, vapor phase concentration), the system achieves high deposition selectivity (>80%) while maintaining practical deposition rates suitable for manufacturing productivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enables selective deposition of noble metals with high selectivity (>80%) on specific surfaces, reducing the complexity and cost of semiconductor processing and mitigating pattern misalignment issues, while forming continuous and pinhole-free layers.
Implementation Method 1
providing a noble metal precursor comprising a noble metal β-diketonate compound in the reaction chamber in vapor phase, and providing a reactant in the reaction chamber in vapor phase to deposit a material comprising noble metal on the first surface
Implementation Method 2
a method of selectively depositing material comprising noble metal on a substrate by a cyclic deposition process
Data Source
AI summary
The current disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. In the disclosure, a material comprising noble metal is selectively deposited on a substrate by a cyclic deposition process. The deposition method comprises providing a substrate in a reaction chamber, wherein the substrate comprises a first surface comprising a first material, and a second surface comprising a second material. A noble metal precursor comprising a noble metal β-diketonate compound is provided in the reaction chamber in vapor phase and a reactant is provided in the reaction chamber in vapor phase to deposit a material comprising noble metal on the first surface relative to the second surface.