Selective Organic Layer Deposition on Mixed Semiconductor Surfaces
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in selectively depositing organic polymer layers on substrates with different surface materials, requiring improved precursor selection and deposition methods to enhance scalability and reduce processing costs.
Innovation Solution
A method and apparatus for selectively depositing organic material using a cyclic deposition process with specific vapor-phase precursors, including a diamine compound with at least five carbon atoms and amine groups attached to non-adjacent carbon atoms, allowing selective deposition on a first surface relative to a second surface, such as metal or dielectric surfaces, without the need for blocking or catalytic agents.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional patterning methods are used to deposit different materials on semiconductor substrates, then material deposition can be achieved, but the number of processing steps increases and processing cost increases
Solution Approach 1:
The patent extracts and eliminates the need for blocking agents and catalytic agents from the deposition process. By using selective vapor-phase precursors that inherently react only with specific surface materials (e.g., metal surfaces vs. dielectric surfaces), the method removes the complexity of additional patterning steps while maintaining selective material deposition.
Solution Approach 2:
The patent changes the chemical parameters of the deposition process by using specifically designed vapor-phase precursors with different reactivities. The first precursor is selected to react selectively with metal surfaces, while the second precursor reacts selectively with dielectric surfaces, enabling selective deposition through parameter optimization rather than additional process steps.
2Device complexity
If selective deposition is used to reduce processing steps, then manufacturing complexity decreases, but precursor selection and deposition control become more difficult
Solution Approach 1:
The patent introduces vapor-phase precursors as intermediaries that mediate between the deposition equipment and the substrate surfaces. These precursors act as selective carriers that deliver material only to intended surfaces based on their chemical reactivity, simplifying the overall process while maintaining precise control through well-defined chemical reactions.
Solution Approach 2:
The selective deposition process is made self-regulating through the inherent selectivity of the vapor-phase precursors. The precursors automatically react only with their target surface materials without requiring external control mechanisms or blocking agents, enabling the system to self-regulate the deposition location based on surface chemistry.
3Adaptability or versatility
If existing vapor-phase precursors are used for organic polymer deposition, then deposition can proceed, but the selection of precursors is limited and handling difficulty increases
Solution Approach 1:
The patent optimizes precursor parameters by selecting vapor-phase precursors with appropriate volatility, reactivity, and physical properties. The first precursor is chosen to be volatile enough for vapor-phase delivery but stable enough for handling, while maintaining selective reactivity with metal surfaces. Similarly, the second precursor is optimized for dielectric surface reactivity, expanding precursor selection while ensuring ease of operation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves selective deposition of organic material with high selectivity (above 50%) on targeted surfaces, reducing the need for additional processing steps and enhancing scalability in narrow structures.
Implementation Method 1
Vapor-phase deposition processes such as chemical vapor deposition (CVD)... may be used to deposit organic polymer layers
Implementation Method 2
vapor deposition polymerization (VDP)... may be used to deposit organic polymer layers
Data Source
AI summary
The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing an organic layer selectively on a substrate comprising at least two different surfaces. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber. In the method, the first and second vapor-phase precursors form the organic material selectively on the first surface relative to the second surface, and the first vapor-phase precursor comprises a diamine compound comprising at least five carbon atoms and the amine groups being attached to non-adjacent carbon atoms.