Selective Oxide Film Etching on Dual-Material Semiconductor Surfaces
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in selectively growing and forming films on specific surfaces with different materials, particularly in effectively removing oxide films from certain surfaces while preserving others.
Innovation Solution
A method involving a substrate with distinct surfaces, forming oxide films on one surface and selectively removing the oxide film from the other surface using an etching agent, followed by modifying the remaining oxide film and forming a new film on the treated surface.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a selective growth process is used to form a film on a specific surface, then the film can be formed selectively on the desired surface, but it becomes difficult to effectively remove oxide films from other surfaces while preserving the film on the target surface
Solution Approach 1:
The method applies preliminary action by forming an oxide film on the surface before the selective film formation process. This pre-formed oxide film serves as a protective layer that can be selectively removed later, enabling precise control over which surfaces receive the final film. The oxide film is formed in advance on surfaces that should ultimately receive the film, then selectively removed from areas where the film should not form, creating the desired selective film pattern.
Solution Approach 2:
The oxide film acts as an intermediary layer that mediates between the substrate and the final film formation process. By forming this intermediate oxide layer selectively and then removing it from specific areas, the method enables precise control over film deposition locations. The intermediary oxide film allows for selective etching and subsequent selective film formation on the remaining oxide-covered areas.
2Quantity of substance
If an etching agent is used to remove oxide films, then oxide removal can be achieved, but it becomes difficult to maintain the integrity and quality of the remaining oxide film on the first surface
Solution Approach 1:
The method applies local quality by creating different oxide film compositions and thicknesses on different surfaces of the substrate. The first oxide film on the first surface is formed with specific characteristics (composition, thickness) that make it resistant to the etching agent, while the second oxide film on the second surface has different characteristics that make it susceptible to removal. This local differentiation in oxide film properties enables selective etching while preserving the integrity of the remaining oxide film.
Solution Approach 2:
The method utilizes parameter changes by varying the oxidation conditions to create oxide films with different properties on different surfaces. By controlling oxidation parameters such as temperature, oxygen partial pressure, and exposure time differently for different surfaces, the oxide films acquire distinct etching resistances. The etching process then exploits these parameter differences to selectively remove oxide from the second surface while preserving the first oxide film.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables effective selective processing on desired surfaces by ensuring precise film formation and removal, enhancing the manufacturing process efficiency and quality of semiconductor devices.
Implementation Method 1
removing the second oxide film formed on the second surface while leaving the first oxide film formed on the first surface by exposing the substrate to an etching agent
Data Source
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AI summary
There is provided a technique that includes: (a) providing a substrate including a first surface and a second surface whose material is different from a material of the first surface, a first oxide film being formed on the first surface, and a second oxide film being formed on the second surface; and (b) removing the second oxide film formed on the second surface while leaving the first oxide film formed on the first surface by exposing the substrate to an etching agent.