Selective Oxide Thin-Film Deposition on Passivated Substrates
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Solution Overview
Problem
Current vapor deposition techniques face challenges in selectively depositing oxide materials on semiconductor substrates, particularly in controlling the concentration of oxygen-containing reactants like ozone or water, which can destroy or oxidize unintended surfaces, leading to non-uniformity and inefficiency in forming thin films.
Innovation Solution
A cyclical vapor deposition process using molecular oxygen (O2) as a second precursor, which selectively deposits insulating metal oxides like magnesium, lanthanum, or hafnium oxides on specific surfaces without degrading organic passivation layers, allowing for precise control over film thickness and selectivity by alternating between vapor phase precursors and purge gases.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If traditional vapor deposition techniques use ozone or water as oxygen-containing reactants, then oxide film deposition can be achieved, but the organic passivation layers on unintended surfaces are destroyed or oxidized
Solution Approach 1:
The patent changes the chemical parameters of the oxygen-containing reactant from traditional ozone or water to molecular oxygen (O2). This parameter change fundamentally alters the reactivity profile, allowing selective oxidation of metal precursors while preserving organic passivation layers on unintended surfaces, thus resolving the contradiction between deposition effectiveness and surface damage prevention
Solution Approach 2:
The invention implements local quality by making the oxidation process selective to specific surfaces.通过使用分子氧作为反应物，氧化反应仅在具有金属前驱物的表面发生，而不会氧化有机钝化层覆盖的表面。这种局部选择性解决了普遍氧化导致的表面损伤问题，实现了精确的局部氧化控制
2Area of stationary object
If blanket deposition is used to cover the entire substrate surface, then complete coverage is achieved, but subsequent selective removal processes are required
Solution Approach 1:
The invention applies segmentation by dividing the substrate into different regions with distinct surface properties (e.g., metal surfaces vs. organic passivation layers). The deposition process then selectively targets specific segments based on their chemical characteristics, eliminating the need for blanket deposition followed by selective removal, thus reducing process complexity while maintaining complete coverage where needed
Solution Approach 2:
The invention extracts the selectivity function from the deposition process itself rather than relying on subsequent removal steps. By using molecular oxygen that selectively reacts with metal precursors on specific surfaces, the desired pattern is directly formed during deposition, removing the need for additional selective etching or removal processes
3Productivity
If high concentration of oxygen-containing reactants is used, then rapid oxide film formation is achieved, but unintended oxidation and non-uniformity occur
Solution Approach 1:
The patent changes the concentration and reactivity parameters of the oxygen source from high-reactivity ozone or water to molecular oxygen with controlled reactivity. This allows using higher concentrations of O2 to achieve rapid film formation while maintaining selectivity and uniformity, as molecular oxygen only reacts with activated metal precursor sites rather than indiscriminately oxidizing all surfaces
Solution Approach 2:
The invention introduces molecular oxygen as an intermediary species that mediates between the metal precursors and the final oxide film. This intermediary approach allows controlled, selective oxidation reactions to proceed rapidly at the metal surface while preventing unwanted oxidation of organic layers, thus achieving both high productivity and manufacturing precision
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method achieves high selectivity and uniformity in oxide film deposition, maintaining the integrity of organic surfaces and achieving desired film thickness with improved retention and minimal damage, outperforming traditional processes using ozone or water as oxygen sources.
Implementation Method 1
contacting the substrate with a first vapor phase precursor
Implementation Method 2
contacting the substrate with a second vapor phase precursor comprising molecular oxygen (O2)
Data Source
AI summary
Methods are provided herein for deposition of oxide films. Oxide films may be deposited, including selective deposition of oxide thin films on a first surface of a substrate relative to a second, different surface of the same substrate. For example, an oxide thin film such as an insulating metal oxide thin film may be selectively deposited on a first surface of a substrate relative to a second, different surface of the same substrate. The second, different surface may be an organic passivation layer.