Selective Page Erase for Multi-Level Cell Memory Lifespan
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Solution Overview
Problem
Existing storage systems face inefficiencies in data removal processes, particularly during purge operations, which can be resource-intensive and impact device lifespan, and may not conveniently erase blocks due to voltage drifts and mixed level-capacity usage, leading to system performance issues.
Innovation Solution
The development of systems and methods that selectively destroy data on a selected page of a multi-level cell memory, such as a triple-level cell, while maintaining data on non-selected pages, using modified erase distributions and selective overwrite techniques to minimize program disturb to non-selected data.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Loss of information
If a full block erase operation is performed to remove data, then data removal is achieved, but resource consumption increases and device lifespan is impacted
Solution Approach 1:
The patent segments the data removal operation from the traditional full-block erase approach. Instead of erasing entire blocks, the system identifies and selectively overwrites only the specific pages or cells containing the data to be removed. This segmentation allows precise targeting of data for deletion while leaving the rest of the block intact, thereby reducing the resource consumption and wear associated with erasing entire blocks.
Solution Approach 2:
The patent applies local quality by making different parts of the memory block have different functions. Selected pages undergo overwrite operations for data removal, while non-selected pages remain unchanged and retain their original state. This localized approach ensures that only the necessary portions of the memory are modified, minimizing resource consumption and extending device lifespan by avoiding unnecessary erase cycles on the entire block.
2Loss of information
If a full block erase operation is performed to remove data, then data removal is achieved, but device lifespan is impacted
Solution Approach 1:
The patent segments the data removal operation from the traditional full-block erase approach. Instead of erasing entire blocks, the system identifies and selectively overwrites only the specific pages or cells containing the data to be removed. This segmentation allows precise targeting of data for deletion while leaving the rest of the block intact, thereby reducing the resource consumption and wear associated with erasing entire blocks.
Solution Approach 2:
The patent changes the operational parameter from full-block erase to selective page overwrite. By modifying the erase distribution and using selective overwrite techniques, the system alters how data removal is accomplished—transitioning from a coarse-grained block-level operation to a fine-grained page-level operation. This parameter change reduces the number of erase cycles required, thereby extending device lifespan.
3Loss of energy
If selective overwrite is performed on a selected page, then resource consumption is reduced, but data removal completeness must be ensured
Solution Approach 1:
The patent employs feedback mechanisms to ensure data removal completeness. The system monitors the overwrite operations on selected pages and verifies that the data has been successfully removed. This feedback loop allows the system to confirm that the selective overwrite achieved the desired data removal effect, ensuring reliability while maintaining reduced resource consumption.
Solution Approach 2:
The patent performs preliminary actions by identifying and selecting the specific pages containing data to be removed before executing the overwrite operation. By预先 determining the target pages and preparing the overwrite sequence, the system ensures that the selective overwrite will achieve complete data removal. This preliminary planning and verification process guarantees reliability while maintaining efficiency.
Data Source
AI summary
Apparatus and methods are disclosed, including receiving an indication to selectively erase first data stored on a first page of a first subset of a group of multi-level memory cells of the storage system, each multi-level memory cell comprising multiple pages and providing, in response the indication to selectively erase the first data, at least one soft erase pulse to the first page of memory cells associated with the first data to induce distribution overlap across different bit levels of the first page of the group of multi-level memory cell.