Selective Passivation for Metal-Dielectric Deposition Precision
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Solution Overview
Problem
Existing selective deposition processes lack sufficient selectivity for achieving desired patterning in semiconductor manufacturing, often requiring expensive multi-step lithographic techniques and surface treatments that themselves necessitate lithography.
Innovation Solution
A method involving selective formation of an inhibitor layer on one surface relative to another, followed by selective deposition of a layer of interest, utilizing vapor phase reactants and plasma treatments, with optional cleaning steps to enhance selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional blanket layer deposition with photolithographic masking is used, then patterning can be achieved, but the process complexity and cost increase due to multiple lithography steps
Solution Approach 1:
The patent applies preliminary action by performing surface treatment on specific regions before deposition to create selective adhesion properties. This pre-conditioning of surfaces allows subsequent blanket deposition to automatically pattern materials based on surface energy differences, eliminating the need for post-deposition lithographic masking steps.
Solution Approach 2:
The invention extracts the patterning function from the deposition process itself by using differential surface treatment. Instead of depositing uniformly and then removing unwanted material through masking and etching, the method creates selective adhesion zones that guide material placement during deposition, removing the need for separate lithographic patterning steps.
2Reliability
If surface pre-treatment is applied to inhibit or encourage deposition, then selectivity can be improved, but lithography steps are still required to apply treatments selectively
Solution Approach 1:
The patent implements self-service by creating surfaces with inherently different adhesion properties through selective treatment. Once these differential surface properties are established, the blanket deposition process automatically self-patterns based on these properties without requiring additional lithographic guidance or masking steps.
Solution Approach 2:
The invention introduces surface energy modification as an intermediary mechanism between the deposition source and substrate. By treating specific regions to alter their surface energy characteristics, the method creates a mediator layer that controls material adhesion and patterning during blanket deposition, replacing the need for lithographic intermediaries.
3Manufacturing precision
If additive patterning with lift-off or damascene techniques is used, then material deposition can be controlled, but multiple processing steps and lithography are still required
Solution Approach 1:
The patent merges the patterning and deposition functions into a single integrated process step. By combining selective surface treatment with blanket deposition, the method achieves material placement precision traditionally requiring separate lift-off or damascene steps, while eliminating the need for intermediate lithographic processes.
Solution Approach 2:
The invention applies preliminary surface treatment to create selective adhesion zones before deposition. This preliminary conditioning enables the subsequent blanket deposition to automatically achieve precise material placement through differential adhesion, eliminating the need for post-deposition lift-off or damascene processing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables selective deposition with reduced lithography steps, allowing enhanced scaling in narrow structures and minimizing deposition on undesired surfaces without the need for expensive masking processes.
Implementation Method 1
selectively forming an inhibitor layer from vapor phase reactants on the first surface relative to the second surface
Implementation Method 2
treating includes exposing the substrate to a plasma
Implementation Method 3
selectively depositing a layer of interest from vapor phase reactants on the second surface relative to the passivation layer
Implementation Method 4
cleaning comprises treatment with hydrogen plasma
Data Source
AI summary
Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.