Selective Passivation Layer Deposition on Dielectric Surfaces
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Current methods for selectively depositing passivation layers on substrates with both dielectric and metallic surfaces are inefficient due to the need for complex patterning and etch steps, and surface properties of metallic surfaces hinder precise deposition.
Innovation Solution
A cyclical deposition process involving multiple cycles of vapor phase organic precursors, with optional steps using vapor phase reducing agents or etchants, is used to selectively deposit a passivation layer on dielectric surfaces relative to metallic surfaces, employing a plasma-free thermal molecular layer deposition method.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a continuous passivation layer is deposited and subsequently patterned using lithography and etch steps, then the passivation layer can be formed on the substrate, but the process becomes time consuming and expensive while lacking the required precision
Solution Approach 1:
The invention extracts and eliminates the complex lithography and etch patterning steps from the conventional continuous deposition process. By using selective deposition techniques, the passivation layer is deposited only in desired areas directly, removing the need for subsequent patterning operations and achieving both simplified process flow and high precision without requiring complex device manipulation.
Solution Approach 2:
The invention applies preliminary surface treatment to metallic surfaces by removing native oxides and contaminants before deposition. This preparatory action enables selective deposition by creating distinct surface properties between dielectric and metallic areas, allowing the passivation layer to form only on dielectric surfaces without requiring complex post-deposition patterning steps.
2Device complexity
If selective deposition processes are used to deposit passivation layer only in desired areas, then the need for subsequent patterning steps is eliminated, but the surface properties of metallic surfaces negatively impact deposition selectivity
Solution Approach 1:
The invention performs preliminary surface preparation by removing native oxides and contaminants from metallic surfaces before the deposition process. This preliminary action creates a clean metallic surface that does not promote passivation layer formation, enabling high selectivity in depositing the passivation layer only on dielectric surfaces while simplifying the overall process by eliminating the need for complex patterning steps.
Solution Approach 2:
The invention creates different surface properties locally by treating metallic surfaces differently from dielectric surfaces. Through selective oxide removal and contamination control on metallic areas, the surface becomes chemically distinct, causing the passivation layer to deposit preferentially on dielectric surfaces. This local differentiation achieves high deposition selectivity without requiring complex device patterning.
3Manufacturing precision
If conventional lithography and etch processes are used for patterning, then the passivation layer can be formed on specific areas, but the process is time consuming and expensive
Solution Approach 1:
The invention extracts and removes the time-consuming lithography and etch steps from the conventional workflow. By using selective deposition techniques that inherently form patterns during the deposition process itself, the invention eliminates the need for separate patterning operations, achieving both high precision pattern formation and improved productivity without increasing process complexity.
Solution Approach 2:
The invention merges the patterning function with the deposition function into a single integrated process. The selective deposition technique simultaneously achieves both pattern formation and material deposition, combining what were previously separate sequential operations (lithography for patterning, then deposition for material formation) into one unified process that is both precise and efficient.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach achieves selective deposition with high selectivity (>50%) and avoids the need for complex patterning, ensuring precise control and improved precision in forming passivation layers on substrates.
Implementation Method 1
selectively depositing a passivation layer on the first dielectric surface relative to the second metallic surface by performing multiple deposition cycles of a cyclical deposition process in which the substrate is alternately and sequentially contacted with a first vapor phase organic precursor and a second vapor phase organic precursor
Implementation Method 2
cyclical deposition process in which the substrate is alternately and sequentially contacted with a first vapor phase organic precursor and a second vapor phase organic precursor for forming the passivation layer
Implementation Method 3
one or more of the deposition cycles includes an additional step of contacting the substrate with an additional vapor phase reactant comprising a vapor phase reducing agent
Implementation Method 4
one or more of the deposition cycles includes an additional step of contacting the substrate with an additional vapor phase reactant comprising a vapor phase etchant
Data Source
AI summary
Methods for forming selective passivation layers on a first dielectric surface relative to a second metallic surface are disclosed. Methods for utilizing selective passivation layers for depositing target films as also disclosed. Exemplary structures that include selective passivation layers are further disclosed.