Area-Selective Passivation for Low-Defect Semiconductor Deposition
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in achieving efficient and reliable selective deposition, particularly in reducing defectivity and improving selectivity, which are crucial for scaling in narrow structures and reducing processing costs.
Innovation Solution
A process for selective deposition on a substrate with multiple surfaces, involving the use of specific precursors such as alkylaminosilanes and hydrophobic compounds to form passivation layers and an inhibitor layer, allowing for controlled deposition on specific surfaces relative to others.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Length of moving object
If conventional multi-step lithographic techniques are used for patterning, then patterning can be achieved, but processing cost increases and device scaling to narrow structures becomes difficult
Solution Approach 1:
The patent extracts and eliminates the need for expensive multi-step lithographic techniques by implementing selective deposition processes that directly pattern materials without requiring photolithographic masking steps, thereby reducing processing complexity while enabling continued device scaling
Solution Approach 2:
The patent applies preliminary surface treatment and passivation steps to specific regions before deposition, enabling selective material placement without subsequent lithographic patterning steps, thus reducing the overall number of processing steps required
2Productivity
If selective deposition is implemented to reduce processing steps, then processing cost decreases, but selectivity and defectivity control become challenging
Solution Approach 1:
The patent applies different surface treatments, passivation layers, and precursor chemistries to different regions of the substrate, creating locally optimized conditions that achieve high deposition selectivity on specific surfaces while maintaining overall processing efficiency
Solution Approach 2:
The patent utilizes changes in precursor chemistry, temperature, pressure, and surface properties to control deposition selectivity, allowing selective material placement on different surfaces through parameter optimization rather than multiple processing steps
3Length of moving object
If area selective deposition is used to enable scaling in narrow structures, then device scaling is enhanced, but process reliability and defect reduction need improvement
Solution Approach 1:
The patent segments the deposition process into distinct stages with different precursors and conditions for different surfaces, enabling precise control of material placement in narrow structures while maintaining manufacturing precision through staged process optimization
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The process enables selective deposition with high selectivity and reduced defectivity, allowing for enhanced scaling in narrow structures and potentially lowering processing costs by reducing the number of steps required.
Implementation Method 1
contacting the substrate with a first precursor comprising a first alkylaminosilane to selectively deposit a first passivation layer on the first surface
Implementation Method 2
contacting the substrate with a second precursor comprising a hydrophobic group to selectively deposit a second passivation layer on the second surface
Implementation Method 3
contacting the substrate with a first inhibitor precursor comprising an amine and e) contacting the substrate with a second inhibitor precursor comprising a dianhydride to selectively deposit an inhibitor layer on the third surface
Data Source
AI summary
A method, system and apparatus for selective deposition on a substrate, comprising providing the substrate in a reaction chamber, the substrate comprising a first surface and a second surface, wherein the first surface is materially different from the second surface, wherein the first surface is a metal oxide, metal nitride, metal oxynitride, or a metal carbide or a combination thereof, wherein the second surface is a dielectric or a metal and contacting the substrate with a precursor comprising a hydrophobic compound to selectively deposit a passivation layer on the first surface relative to the second surface.