Selective Passivation for High-Selectivity Vapor Deposition
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Solution Overview
Problem
Current selective deposition techniques in semiconductor manufacturing lack sufficient selectivity, often requiring expensive lithographic processes and surface pretreatments that themselves necessitate lithography.
Innovation Solution
A method involving the selective formation of an inhibitor layer on one surface of a substrate relative to another, followed by baking and selective deposition of a layer of interest on the second surface, utilizing vapor phase reactants and potentially including pretreatment steps like plasma exposure or silane treatment.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional selective deposition techniques are used, then deposition can be performed on specific surfaces, but the selectivity is not high enough to accomplish the goals of selectivity
Solution Approach 1:
An organic inhibitor layer is introduced as an intermediary substance that selectively adsorbs to specific crystallographic orientations (e.g., Cu(100) surfaces) to prevent deposition on those surfaces. This mediator enables high selectivity by chemically modifying the surface properties of targeted areas, allowing deposition to occur only on desired surfaces such as Cu(111) orientations.
Solution Approach 2:
The inhibitor layer is applied locally to specific crystallographic orientations rather than uniformly across all surfaces. This local quality approach allows different regions of the substrate to have different deposition properties, with the inhibitor selectively binding to certain orientations to prevent deposition only where needed, achieving high spatial selectivity.
2Manufacturing precision
If surface pretreatment is applied to inhibit or encourage deposition, then selectivity can be improved, but such treatments call for lithography which increases process complexity
Solution Approach 1:
The inhibitor layer performs a self-service function by automatically and selectively adsorbing to specific crystallographic orientations through inherent chemical affinity. This self-selective process eliminates the need for external lithography patterns or masks, as the material itself directs where deposition should and should not occur based on its crystal structure.
Solution Approach 2:
The mechanical lithographic system (masks, aligners, patterning tools) is replaced with a chemical self-assembly system. Instead of using physical masks to define patterns, the inhibitor layer chemically identifies and binds to specific crystallographic planes, substituting mechanical patterning with chemical recognition and selective adsorption.
3Manufacturing precision
If conventional patterning processes are used, then materials can be deposited with defined patterns, but expensive multi-step lithographic techniques are required
Solution Approach 1:
The crystallographic orientation of the substrate surfaces provides self-service pattern definition. Different crystallographic orientations (e.g., Cu(100) vs. Cu(111)) inherently respond differently to the inhibitor layer, with one orientation being blocked and the other remaining receptive to deposition. This self-differentiating property eliminates the need for expensive lithographic patterning steps.
Solution Approach 2:
The chemical parameters of the surface (crystallographic orientation, surface energy, atomic arrangement) are exploited to create selective deposition behavior. By changing the chemical nature of the surface through crystal orientation rather than requiring physical patterning, the process achieves pattern definition through material properties rather than manufacturing steps.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables more practical and cost-effective selective deposition by reducing the number of lithography steps, enhancing scaling in narrow structures, and improving the selectivity of deposition processes.
Implementation Method 1
selectively forming an inhibitor layer from vapor phase reactants on the first surface relative to the second surface
Implementation Method 2
baking the inhibitor layer
Implementation Method 3
selectively depositing a layer of interest from vapor phase reactants on the second surface relative to the passivation layer
Implementation Method 4
treating includes exposing the substrate to a plasma
Data Source
AI summary
Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.