Selective Pattern-Forming Composition for Sub-30 Nm Semiconductor Features
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Solution Overview
Problem
Conventional methods for forming fine patterns on semiconductor devices, particularly those below 30 nm, face technical difficulties due to optical limitations and require complex processes involving chemical modification, metal oxide formation, and equipment specific to ALD or CVD processes.
Innovation Solution
A pattern-forming method that applies a first composition with a polymer containing an acid-labile group and a functional group that selectively bonds to metal or Si—OH bonds, followed by heating and selective removal to form a first lamination portion. A second composition with a similar polymer, an acid generating agent, and solvent is then applied, heated or exposed, and selectively removed to form a second lamination portion, thereby creating a pattern with height in a regionally selective manner.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography methods are used for forming fine patterns, then existing manufacturing processes can be maintained, but optical limitations prevent formation of patterns below 30 nm
Solution Approach 1:
The patent replaces conventional optical lithography with a chemical self-assembly approach. A block copolymer composition is applied to the substrate, and through phase separation and self-organization, forms nanoscale patterns without requiring optical systems. This substitution of optical methods with chemical/physical self-assembly enables pattern formation below the optical diffraction limit.
2Manufacturing precision
If bottom-up techniques with chemical modification are used to form fine patterns, then sub-30 nm patterns can be achieved, but high regional selectivity requires complex processes involving metal oxide formation and ALD/CVD equipment
Solution Approach 1:
The patent extracts and eliminates the complex metal oxide formation and ALD/CVD processing steps from the conventional bottom-up approach. Instead, it uses a simplified block copolymer self-assembly method where the polymer composition itself provides the necessary selectivity and pattern formation, removing the need for additional equipment and process steps while maintaining sub-30 nm pattern capability.
Solution Approach 2:
The patent changes the fundamental parameters of the patterning approach by using block copolymer phase separation rather than chemical modification followed by metal oxide deposition. By adjusting polymer composition, molecular weight, and processing conditions, the method achieves high regional selectivity and fine pattern formation through intrinsic polymer properties rather than extrinsic process complexity.
3Ease of manufacture
If block copolymer composition is used for self-assembly, then patterns can be formed without ALD/CVD processes, but achieving high regional selectivity requires specific polymer functional groups that selectively bond to metal or Si—OH bonds
Solution Approach 1:
The patent employs block copolymers with specific functional groups (such as carboxylic acid groups in polyacrylic acid blocks) that provide selective bonding to metal atoms or Si—OH bonds. This composite material approach combines the self-assembly capability of block copolymers with specific chemical functionality to achieve both process simplification and high regional selectivity simultaneously.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method enables the formation of patterns with height in a regionally selective manner on semiconductor substrates without the need for complex ALD or CVD processes, simplifying the procedure and achieving high regional selectivity.
Implementation Method 1
a first polymer including: a first structural unit which includes an acid-labile group; and a functional group which selectively bonds to a metal atom or an Si—OH bond
Implementation Method 2
The first coating film is heated. A portion other than a portion formed on the first region or a portion other than a portion formed on the second region of the first coating film heated is removed
Implementation Method 3
a second composition includes: a second polymer including the first structural unit; an acid generating agent; and a solvent. The second coating film is heated or exposed
Implementation Method 4
The second coating film is heated or exposed. A portion other than a portion formed on the first lamination portion of the second coating film heated or exposed is removed
Data Source
AI summary
A pattern-forming method includes applying a first composition on a surface layer of a substrate to form a first coating film. The surface layer includes a first region which includes a metal atom, and a second region which includes a silicon atom. The first coating film is heated. A portion other than a portion formed on the first region or a portion other than a portion formed on the second region of the first coating film heated is removed, thereby forming a first lamination portion. A second composition is applied on the substrate on which the first lamination portion is formed to form a second coating film. The second coating film is heated or exposed. A portion other than a portion formed on the first lamination portion of the second coating film heated or exposed is removed, thereby forming a second lamination portion.