Selective Polyimide Vapor Deposition for Harder Semiconductor Layers
Find Innovative SolutionsGenerate Solutions
Solution Overview
Problem
Existing polyimide layers in semiconductor fabrication suffer from low hardness, poor electrical performance, and limited precursor selection, which hinders selective deposition and scalability in semiconductor device manufacturing.
Innovation Solution
A cyclic deposition process using specific vapor-phase precursors, including a first precursor with a tetravalent element and a second precursor with polymerization groups, allows selective deposition of polyimide material on a substrate, achieving preferential growth on one surface over another, with a selectivity of above 50%.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional polyimide deposition methods are used, then polyimide layers can be formed, but the layers exhibit low hardness and poor electrical performance
Solution Approach 1:
The patent changes the chemical parameters of the deposition process by using specific vapor-phase precursors (Formula I with tetravalent element M and Formula II with polymerization groups) instead of conventional liquid precursors. This parameter change in the deposition method results in polyimide layers with simultaneously improved hardness and electrical performance, resolving the contradiction between these two properties.
Solution Approach 2:
The patent employs a composite precursor system combining two distinct chemical formulas: Formula I containing a tetravalent element (M = Si, Ge, Ti, Zr, Hf) and Formula II containing polymerization groups with carbonyl groups. This composite approach creates polyimide layers with enhanced combined properties including both hardness and electrical performance.
2Productivity
If selective deposition is implemented to reduce processing steps, then the number of patterning steps decreases, but achieving high selectivity (>50%) requires precise control of deposition parameters
Solution Approach 1:
The patent applies local quality by making the deposition process surface-specific through the use of vapor-phase precursors that selectively interact with different substrate surfaces. The precursors exhibit preferential adsorption and reaction on specific surface types, enabling selective deposition on target surfaces while minimizing deposition on non-target surfaces, thus achieving >50% selectivity.
Solution Approach 2:
The patent changes key deposition parameters including precursor phase (vapor-phase), precursor chemistry (specific functional groups in Formulas I and II), and deposition conditions to achieve high selectivity. These parameter changes enable selective deposition that reduces processing steps while maintaining precise control over where material is deposited.
3Reliability
If vapor-phase precursors with specific formulas are used, then polyimide layers with enhanced properties are obtained, but the precursor selection and handling complexity increases
Solution Approach 1:
The patent uses vapor-phase precursors as intermediaries that deliver the necessary chemical groups (tetravalent element from Formula I and polymerization groups from Formula II) to the substrate surface. These vapor-phase intermediaries enable controlled deposition of high-performance polyimide layers while allowing for manageable handling through established vapor deposition infrastructure.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method enhances the hardness and electrical performance of polyimide layers, enabling selective deposition and reducing processing steps, thereby improving the scalability and cost-effectiveness of semiconductor manufacturing.
Implementation Method 1
Vapor-phase deposition processes, such as chemical vapor deposition (CVD), vapor deposition polymerization (VDP), molecular layer deposition (MLD), and sequential deposition processes, such as atomic layer deposition (ALD) and cyclical vapor deposition (CVD), may be used to deposit organic polymer layers, such as polyimide layers.
Data Source
AI summary
The present disclosure relates to methods and apparatuses for the manufacture of semiconductor devices. More particularly, the disclosure relates to methods and apparatuses for depositing a layer of a polyimide material on a substrate. The process comprises providing a substrate in a reaction chamber, providing a first vapor-phase precursor in the reaction chamber, and providing a second vapor-phase precursor in the reaction chamber.