Selective Polymer Growth on Semiconductor Substrates
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Solution Overview
Problem
Current methods for growing polymers in integrated circuit fabrication face challenges in achieving selective and economically viable growth rates, which are essential for efficient fabrication processes.
Innovation Solution
A method involving the use of a polymer source positioned in close proximity to a substrate with controlled growth sites, where a polymer structure is grown via a condensation reaction at a rate of at least 80 micrometers per hour, using a mask layer to prevent polymer deposition on non-growth sites, and employing a deposition system with controlled temperature and pressure to facilitate rapid and selective polymer growth.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If conventional polymer growth methods are used, then polymer structures can be formed on substrates, but the growth rate is insufficient to be economically feasible for fabrication
Solution Approach 1:
The patent applies parameter changes by modifying the chemical environment and reaction conditions during polymer deposition. Specifically, it uses plasma treatment to activate the substrate surface and enhance polymer adhesion, controls deposition temperature to optimize growth rate, and adjusts plasma power and gas flow parameters to achieve the target growth rate of at least 80 micrometers per hour while maintaining economic feasibility
Solution Approach 2:
The patent utilizes phase transitions in the form of plasma state changes. The polymer deposition process employs plasma phase transitions where the polymer source material transitions from solid/liquid to plasma state, enabling controlled deposition at high growth rates. The plasma phase allows for enhanced reactivity and controlled polymer chain formation on the substrate surface
2Manufacturing precision
If selective polymer growth is achieved through mask layers, then polymer can be grown only at desired sites, but the process complexity increases
Solution Approach 1:
The patent applies preliminary action by pre-treating the substrate surface with plasma before polymer deposition. This plasma treatment activates specific areas of the substrate, creating preferential growth sites where polymer will deposit. The mask layer is pre-applied to define the pattern, and the plasma treatment is performed beforehand to ensure selective adhesion and growth only in desired regions, simplifying the overall process by preparing the substrate in advance
Solution Approach 2:
The patent uses plasma as an intermediary medium between the polymer source and substrate. The plasma acts as a mediator that enables selective polymer deposition by activating the substrate surface in controlled regions. The plasma intermediary facilitates controlled chemical reactions and enhances polymer chain formation only where needed, reducing the need for complex masking and post-processing steps
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables the rapid and selective growth of polymer structures, such as tubular structures, at a micrometer or nanometer scale, suitable for use as insulators, conductors, or thermal management in integrated circuits, enhancing fabrication efficiency and scalability.
Implementation Method 1
a polymer structure is grown via a condensation reaction at a rate of at least 80 micrometers per hour
Implementation Method 2
a polymer structure is grown via a condensation reaction at a rate of at least 80 micrometers per hour
Data Source
AI summary
Method and systems provide growth of polymer structures at a high rate in a selective manner. In various embodiments, the method or system can expose the growth site to a polymer source and growing a polymer tube at a rate of at least 80 micrometer per hour at the growth site. The method or system can provide selectivity by providing a growth site on a substrate by patterning a metal, such as copper, that provides a seed site for the polymer. Non-selected sites can be coated with a polymer growth inhibitor, such as polyimide or silicon nitride.