Selective Regrowth Nanoscale Structure Fabrication
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Solution Overview
Problem
Current methods for creating nanoscale structures in semiconductor integrated circuits face challenges due to physical limitations and require multiple masking steps, leading to issues like optics effects and nanoscale alignment, making the fabrication process complex and costly.
Innovation Solution
A method involving selective regrowth of semiconductor materials by forming windows in a substrate, depositing a second layer with a gap, and repeatedly regrowing the first layer to create nanoscale structures, allowing for non-uniform features with a simplified process using a single mask step.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If multiple masking steps are used to create nanostructures, then patterning precision can be achieved, but device complexity and fabrication cost increase
Solution Approach 1:
The patent extracts and removes the mask layer after the first layer is deposited, eliminating the need for multiple masking steps. This allows subsequent layers to be deposited directly over the first layer, simplifying the fabrication process while maintaining patterning precision through the selective etching and deposition sequence
Solution Approach 2:
The mask layer is applied and patterned in advance before any layer deposition begins. This preliminary patterning action establishes the nanoscale structure boundaries early in the process, allowing all subsequent layers to conform to this pre-defined pattern without requiring additional masking steps
2Manufacturing precision
If multiple masking steps are employed for nanoscale patterning, then alignment can be achieved, but optics fringing effects worsen
Solution Approach 1:
By removing the mask layer after initial patterning, the patent eliminates the need for additional mask layers that would otherwise be required for subsequent patterning steps. This single mask approach reduces the cumulative optical fringing effects that arise from multiple mask edges and interfaces
Solution Approach 2:
The patent transitions from a planar 2D patterning approach (multiple masks on the same layer) to a 3D vertical stacking approach where patterned layers are deposited sequentially. This dimensional change allows the single mask to define patterns that extend through multiple vertical layers, avoiding the fringing effects of multiple lateral mask edges
3Manufacturing precision
If traditional lithography is used to define patterns at nanometer scale, then critical dimensions can be achieved, but physical limitations increase
Solution Approach 1:
The patent replaces traditional lithography (which relies on optical systems with wavelength limitations) with a direct deposition and selective etching process. This mechanical/chemical approach uses atomic layer deposition or similar techniques to build layers atom-by-atom, achieving sub-10nm precision without being constrained by optical diffraction limits
Solution Approach 2:
The patent changes the fundamental process parameters from optical exposure (wavelength, numerical aperture) to deposition parameters (temperature, pressure, precursor flow rates). This parameter transformation enables precise control of layer thickness and composition at the nanometer and sub-nanometer scale, overcoming the physical limitations of photolithography
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach simplifies the fabrication process, reduces complexity and cost, and enables the creation of densely packed nanostructures with improved alignment and reduced fringing effects, overcoming the limitations of traditional techniques.
Implementation Method 1
regrowing the material comprising the first layer such that the first layer material fills the gap
Data Source
AI summary
The disclosure relates to a method for creating a nanoscale structure. The method includes forming a window in a semiconductor structure, the semiconductor structure comprising a substrate, a first semiconductor layer, and a mask layer; depositing a second semiconductor layer within the window such that a gap remains between the second semiconductor and a portion of the window; and regrowing the first semiconductor layer such that the first semiconductor layer fills the gap.