Selective Ruthenium Deposition Without Substrate Oxidation
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Solution Overview
Problem
Conventional ruthenium deposition processes require multiple steps and use oxygen as a co-reactant, which oxidizes the substrate and lacks selectivity, making it challenging to deposit ruthenium with high precision.
Innovation Solution
A method involving the vaporization of a ruthenium precursor and contact with a reducing gas to selectively deposit ruthenium on a substrate with high selectivity, using atomic layer deposition techniques such as plasma-enhanced atomic layer deposition, without the use of oxygen, allowing for precise control of ruthenium thickness on specific surface portions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If conventional processes use O2 as a co-reactant for ruthenium deposition, then the deposition process can proceed, but the substrate is oxidized during the process
Solution Approach 1:
The patent replaces oxygen-based co-reactants with inert or reducing atmospheres (such as nitrogen, argon, or hydrogen) during the ruthenium deposition process. This eliminates the oxidation of the substrate while maintaining the feasibility of the deposition process, as the inert atmosphere prevents harmful chemical reactions with the substrate.
2Area of stationary object
If conventional processes deposit ruthenium on multiple surface portions, then coverage is achieved, but selectivity is lost
Solution Approach 1:
The patent employs local quality by creating different surface conditions on different portions of the substrate (such as through selective masking, surface treatment, or catalyst distribution) so that ruthenium deposition occurs only on specific areas. This allows precise control over where deposition happens, achieving high selectivity while maintaining coverage on the intended surface portions.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Achieves selective deposition of ruthenium with a selectivity of up to 80 Å, avoiding substrate oxidation and enabling deposition on various surfaces including silicon oxide, silicon nitride, and low k dielectrics at temperatures of 450° C or less.
Implementation Method 1
vaporizing at least a portion of a ruthenium precursor to produce a vaporized ruthenium precursor
Implementation Method 2
contacting a first surface portion and a second surface portion of a substrate with the vaporized ruthenium precursor and at least one reducing gas
Data Source
AI summary
Selective ruthenium deposition and related systems and methods are provided. A method comprises vaporizing at least a portion of a ruthenium precursor to produce a vaporized ruthenium precursor; contacting a first surface portion and a second surface portion of a substrate with the vaporized ruthenium precursor and at least one reducing gas; and depositing ruthenium on the first surface portion of the substrate with a selectivity of at least 25 Å relative to the second surface portion of the substrate. A device comprises a substrate having a first surface portion and a second surface portion adjacent to the first surface portion; and a ruthenium layer located on the first surface portion of the substrate, wherein the ruthenium layer has a thickness of at least 25 Å on the first surface portion of the substrate; wherein the second surface portion of the substrate does not comprise ruthenium.