Selective SAM Film Formation Using Plasma Surface Modification
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Solution Overview
Problem
Existing film forming methods do not effectively increase the density of self-assembled monolayers (SAMs) on specific substrate surfaces.
Innovation Solution
A film forming method that involves providing a substrate with different films in distinct regions, modifying the surface with hydrogen and oxygen or nitrogen plasma, and selectively forming a self-assembled monolayer on one film type using carboxylic acid as a precursor, with controlled gas supply and pressure conditions to enhance adsorption.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Reliability
If conventional film forming methods are used to form SAM on substrate surface, then the SAM can be formed for blocking target film formation, but the density of the SAM is insufficient
Solution Approach 1:
The patent applies preliminary action by performing plasma treatment on the substrate surface before introducing the carboxylic acid precursor. The plasma treatment activates the substrate surface and creates favorable conditions for subsequent SAM formation, ensuring higher density and better blocking performance. This pre-treatment step prepares the surface in advance to maximize the effectiveness of the carboxylic acid adsorption.
Solution Approach 2:
The patent utilizes parameter changes by controlling the introduction timing and amount of carboxylic acid precursor, as well as adjusting plasma treatment parameters (power, gas flow rate, treatment time). By optimizing these parameters and their sequences, the method achieves higher SAM density and improved blocking performance compared to conventional approaches.
2Quantity of substance
If carboxylic acid precursor is continuously supplied to form SAM, then the SAM coverage increases, but the density and uniformity of the SAM decreases
Solution Approach 1:
The patent applies periodic action by introducing the carboxylic acid precursor in a controlled manner with specific timing sequences. The method involves alternating between plasma treatment and precursor introduction, with controlled pause times between steps. This periodic approach ensures uniform and dense SAM formation by allowing proper adsorption and self-assembly at each stage rather than continuous flooding.
Solution Approach 2:
The plasma treatment is performed as a preliminary action before introducing the carboxylic acid precursor. This pre-treatment activates the surface and creates uniform reactive sites, ensuring that when the precursor is introduced, it adsorbs uniformly across the surface, leading to both high coverage and high uniformity.
3Stability of the object's composition
If plasma treatment is applied to modify substrate surface, then the surface reactivity increases for SAM formation, but the substrate surface may be damaged or altered undesirably
Solution Approach 1:
The patent applies parameter changes by carefully controlling plasma treatment parameters including power (50-500 W), gas flow rate (50-500 sccm), and treatment time (1-60 minutes). By optimizing these parameters, the method achieves sufficient surface activation for SAM formation while avoiding excessive damage or unwanted alterations to the substrate surface.
Solution Approach 2:
The plasma treatment is applied periodically and alternately with precursor introduction rather than continuously. This periodic application allows the surface to be activated to the appropriate level without over-treatment, preventing damage while maintaining sufficient reactivity for high-density SAM formation.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
The method significantly increases the density of the self-assembled monolayer, enhancing its blocking performance and allowing for high-temperature film formation while inhibiting target film formation on other regions.
Implementation Method 1
Supplying modification gas formed into plasma to the surface of the substrate, thereby modifying the surface of the substrate. The modification gas used in (B) contains hydrogen and oxygen or contains hydrogen and nitrogen.
Implementation Method 2
supplying gas of carboxylic acid to a process chamber in a state in which the substrate is housed in the process chamber and an internal pressure of the process chamber is reduced, the gas of carboxylic acid being a precursor of the self-assembled monolayer
Implementation Method 3
selectively forming a self-assembled monolayer on a surface of the second film rather than a surface of the first film
Data Source
AI summary
A film forming method includes (A) providing a substrate including a first film and a second film in different regions of a surface of the substrate, the second film being formed of a material different from a material of the first film, (B) supplying modification gas formed into plasma to the surface of the substrate, thereby modifying the surface of the substrate, and (C) after (B), selectively forming a self-assembled monolayer on a surface of the second film rather than a surface of the first film. The modification gas used in (B) contains hydrogen and oxygen or contains hydrogen and nitrogen.