Selective SiARC Removal via Porous Layer Modification
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Solution Overview
Problem
The removal of silicon anti-reflective coating (SiARC) layers in photolithographic processes is challenging due to their non-selective etching characteristics, leading to incomplete removal and potential damage to underlying layers, which hampers the manufacturing of small-feature microelectronic devices.
Innovation Solution
A method involving a pattern transfer process followed by modification and removal processes, where the SiARC layer is converted into a porous form using nitridation or oxidation, enabling selective etching with high sensitivity to device-level structures, utilizing plasma treatments and etch processes to meet target integration objectives.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional etching processes are used on SiARC layers, then etching can proceed, but etch selectivity is poor and underlying layers may be damaged
Solution Approach 1:
The patent applies parameter changes by modifying the chemical composition and physical structure of the SiARC layer through plasma treatment. The process transforms the dense SiARC layer into a porous structure with altered etch characteristics, enabling high selectivity to the pattern transfer layer while protecting underlying layers from damage. This parameter transformation resolves the contradiction between achieving etch selectivity and preventing damage to sensitive underlying structures.
Solution Approach 2:
The patent introduces plasma treatment as an intermediary process between the conventional etching steps. This intermediary plasma modification step creates a porous SiARC layer that serves as a mediator with enhanced etch selectivity, allowing the subsequent etching process to selectively remove SiARC while leaving underlying layers intact. The plasma-treated layer acts as a bridge that enables selective etching without direct damage to sensitive structures.
2Productivity
If SiARC layers are removed using standard methods, then removal can occur, but removal is incomplete and residue remains
Solution Approach 1:
The patent employs parameter changes by transforming the SiARC layer's physical and chemical properties through plasma treatment. The process creates a porous structure with increased surface area and altered reactivity, enabling complete removal without residue. The plasma modification changes the etch rate and removal characteristics, ensuring thorough elimination of SiARC material while preventing any residual deposits on the substrate.
3Area of moving object
If feature size is reduced for higher density, then device functionality improves, but SiARC removal becomes more difficult and problematic
Solution Approach 1:
The patent addresses the scaling challenge by applying parameter changes to the SiARC layer through plasma treatment. The process creates a porous structure that maintains high etch selectivity even at reduced feature sizes. The plasma-modified layer exhibits enhanced removal characteristics that are particularly effective for small-scale features, enabling complete and selective removal without the difficulties associated with conventional methods at advanced technology nodes.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for precise and complete removal of SiARC layers without damaging underlying structures, improving the manufacturing process by enhancing etch selectivity and reducing residue, thus addressing the limitations of existing methods.
Implementation Method 1
utilizing plasma treatments and etch processes
Implementation Method 2
the modification converting the SiARC layer into a porous SiARC layer
Implementation Method 3
enabling selective etching with high sensitivity to device-level structures, utilizing plasma treatments and etch processes
Implementation Method 4
performing a removal process of the porous SiARC layer of the structure
Data Source
AI summary
Methods and systems for selective silicon anti-reflective coating (SiARC) removal are described. An embodiment of a method includes providing a substrate in a process chamber, the substrate comprising: a resist layer, a SiARC layer, a pattern transfer layer, and an underlying layer. Such a method may also include performing a pattern transfer process configured to remove the resist layer and create a structure on the substrate, the structure comprising portions of the SiARC layer and the pattern transfer layer. The method may additionally include performing a modification process on the SiARC layer of the structure, the modification converting the SiARC layer into a porous SiARC layer. Further, the method may include performing a removal process of the porous SiARC layer of the structure, wherein the modification and removal processes of the SiARC layer are configured to meet target integration objectives.