Selective Silicon Dielectric Deposition via Acyl Chloride Blocking
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Solution Overview
Problem
Conventional techniques for depositing silicon oxide and silicon nitride films are not selective relative to other silicon-containing materials on a substrate, leading to non-selective deposition and potential damage to certain surfaces during the process.
Innovation Solution
The method involves using an acyl chloride to form blocking groups on non-target surfaces, followed by thermal atomic layer deposition with specific silicon-containing precursors and reactants to selectively deposit silicon-containing or metal-containing dielectric materials on exposed surfaces, ensuring that the blocked regions remain undamaged.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition techniques are used to deposit silicon oxide or silicon nitride films, then the deposition process can be performed, but the deposition is not selective relative to other silicon-containing materials and may cause damage to certain surfaces
Solution Approach 1:
The patent applies preliminary action by treating the substrate surface with an acyl chloride reagent before the deposition process. This pre-treatment selectively modifies non-target surfaces by forming blocking groups (amides or imides) that prevent subsequent deposition of silicon oxide or silicon nitride. The blocking groups are formed in advance, ensuring that when the deposition process occurs, only exposed surfaces receive the dielectric material, thereby achieving selectivity and preventing damage to blocked regions.
2Productivity
If conventional deposition techniques are used, then the process can be completed, but selectivity between different silicon-containing materials cannot be achieved
Solution Approach 1:
The patent implements local quality by creating spatially differentiated surface properties through selective chemical treatment. The acyl chloride reagent reacts differently with various silicon-containing materials based on their chemical characteristics, forming blocking groups only on specific surfaces. This results in local modification where some areas become deposition-resistant while others remain deposition-friendly, enabling material-selective deposition without compromising process efficiency.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the selective deposition of silicon oxide, silicon nitride, or metal-containing dielectric materials on specific surfaces while protecting the blocked regions, enhancing the precision and effectiveness of semiconductor fabrication processes.
Implementation Method 1
exposing the substrate to an acyl chloride selectively reactive with the exposed second surface to form blocking groups on the exposed second surface
Implementation Method 2
exposing the substrate to a silicon-containing precursor selected to adsorb onto the exposed first surface of the substrate
Implementation Method 3
performing one or more cycles of thermal atomic layer deposition to deposit the silicon-containing dielectric material selectively on the exposed first surface
Data Source
AI summary
Methods and apparatuses for selectively depositing silicon-containing dielectric or metal-containing dielectric material on silicon or metal surfaces selective to silicon oxide or silicon nitride materials are provided herein. Methods involve exposing the substrate to an acyl chloride which is reactive with the silicon oxide or silicon nitride material where deposition is not desired to form a ketone structure that blocks deposition on the silicon oxide or silicon nitride material. Exposure to the acyl chloride is performed prior to deposition of the desired silicon-containing dielectric material or metal-containing dielectric material.