Selective Silicon Dielectric Deposition Without Metal Oxidation
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Solution Overview
Problem
There is a need for a method to selectively deposit silicon dielectrics like silicon oxide, silicon oxynitride, carbon doped silicon oxide, and carbon doped silicon oxynitride on dielectric surfaces while avoiding deposition on adjacent metal hydride surfaces during semiconductor processing, without using strong oxidants such as ozone or oxygen plasma.
Innovation Solution
A thermal atomic layer deposition method involving a halogenated silicon-containing compound that preferentially forms a silicon-containing layer on dielectric surfaces, followed by introduction of a nitrogen source to form a silicon nitride film, and then an oxygen-containing source to create the desired dielectric film, with optional reduction steps to minimize oxidation of metal or metal hydride surfaces.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If strong oxidants such as ozone or oxygen plasma are used to deposit silicon oxide, then deposition speed is improved, but metal or metal hydride surfaces are oxidized
Solution Approach 1:
The patent applies preliminary action by treating the metal or metal hydride surface with a reducing agent before the silicon oxide deposition process. This pre-treatment creates a protective state on the metal surface that prevents oxidation during subsequent exposure to oxidizing conditions, allowing fast deposition without damaging the metal layer
Solution Approach 2:
The patent introduces a reducing agent as an intermediary substance that mediates between the silicon oxide deposition process and the metal surface. This reducing agent acts as a protective intermediary that prevents direct harmful interaction between oxidizing species and the metal surface while allowing the deposition process to proceed
2Manufacturing precision
If selective deposition is achieved through surface treatment, then deposition selectivity is improved, but process complexity increases
Solution Approach 1:
The patent achieves selective deposition by changing the chemical state parameter of the metal surface through reducing agent treatment. By controlling the surface chemistry parameter (reducing vs. oxidizing state), the process achieves high selectivity for depositing on dielectric surfaces while preventing deposition on treated metal surfaces, without requiring complex equipment modifications
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for selective deposition of silicon and oxygen-containing dielectric films on dielectric surfaces without oxidizing metal or metal hydride surfaces, achieving precise control over film thickness and minimizing oxidation, thus enhancing semiconductor processing efficiency.
Implementation Method 1
heating the reactor to at least one temperature ranging from about 25° C. to about 600° C.
Implementation Method 2
introducing a nitrogen source to react with the silicon-containing layer to form a silicon nitride film
Implementation Method 3
introducing an oxygen-containing source into the reactor to react with the silicon nitride film to form a silicon and oxygen containing dielectric film
Implementation Method 4
exposing the substrate to a reducing agent to reduce exposure of any oxidized copper to the weak oxidant gas
Data Source
AI summary
A method for selective deposition of a silicon and oxygen containing dielectric film onto a substrate is disclosed. The method includes the steps of providing a substrate comprising a dielectric surface and a metal, or metal hydride, surface to a reactor. A halogenated silicon-containing compound may be introduced to the reactor to form a silicon-containing layer more abundantly on the dielectric surface than on the metal, or metal hydride, surface. A nitrogen source may be introduced into the reactor to react with the silicon-containing layer to form a silicon nitride film or a carbon doped silicon nitride film. An oxygen-containing source may be introduced to the reactor to react with the silicon nitride or carbon doped silicon nitride film to form the silicon and oxygen containing dielectric film.