Selective Silicon Dielectric Deposition Using Non-Oxidizing Plasma
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Solution Overview
Problem
Current methods for selectively depositing low-k dielectric films, such as SiOC or SiO2, using area-selective deposition (ASD) face challenges including harsh deposition conditions that degrade self-assembled monolayers, slow reaction kinetics with water-reactive silicon precursors, and complex process schemes requiring additional steps for blocking and cleaning.
Innovation Solution
A method involving atomic layer deposition (ALD) or chemical vapor deposition (CVD) processes to selectively deposit silicon-containing dielectric layers on patterned substrates using silicon-based precursors with oxygen-containing ligands and nitrogen bonded to silicon, in combination with a non-oxidizing plasma, minimizing the need for blocking agents and reducing process complexity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If harsh conditions (oxygen plasma or ozone) are used to form silicon-based films, then film deposition is achieved, but self-assembled monolayers or small-molecule inhibitors are degraded
Solution Approach 1:
The patent changes the chemical environment parameters from oxidizing (oxygen plasma/ozone) to non-oxidizing (hydrogen plasma, ammonia plasma, or reducing plasma). This parameter change allows silicon-based film deposition while preserving blocking agents, as the non-oxidizing environment does not degrade the organic blocking molecules that protect non-target areas
Solution Approach 2:
The patent replaces the mechanical/chemical approach of using strong oxidants with a plasma-based chemical vapor deposition approach using non-oxidizing plasmas. This substitution achieves film deposition through alternative chemical pathways that do not involve aggressive oxidation, thereby protecting the blocking agents
2Manufacturing precision
If water-reactive silicon precursors are used, then silicon-based dielectric films can be deposited, but reaction kinetics are slow making practical implementation difficult
Solution Approach 1:
The patent introduces nitrogen-containing ligands bonded to silicon in the precursor molecules. This chemical modification changes the reaction parameters, enabling the silicon precursors to react with nitrogen plasma or ammonia plasma at higher rates than water-reactive precursors react with oxygen plasma, thereby increasing deposition speed while maintaining film quality
Solution Approach 2:
The nitrogen-containing ligands act as intermediaries that facilitate faster reaction kinetics. The nitrogen in the ligands can interact with the plasma environment (hydrogen plasma, ammonia plasma, or reducing plasma) to enable more rapid silicon film formation compared to traditional water-reactive mechanisms
3Manufacturing precision
If chemical blocking agents are used to passivate non-growth surfaces, then selective deposition is achieved, but additional processing steps are required to deposit and remove blocking agents
Solution Approach 1:
The patent employs self-assembled monolayers (SAMs) that automatically form on metal surfaces when exposed to appropriate precursors or treatments. These SAMs serve as inherent blocking agents that require no separate deposition or removal steps - they form spontaneously and can be removed in-situ by plasma treatment during the deposition process itself, making the process self-sufficient
Solution Approach 2:
The patent combines the blocking agent formation and film deposition processes into a single integrated sequence. The non-oxidizing plasma environment simultaneously maintains the blocking agents on metal surfaces and enables silicon-based dielectric deposition on dielectric surfaces, merging what were previously separate process steps into one coordinated operation
4Adaptability or versatility
If multiple metal surfaces with distinct blocking chemistries are present, then selective deposition on each metal type is possible, but process complexity increases
Solution Approach 1:
The patent uses non-oxidizing plasma conditions that universally protect all metal surfaces from oxidation and film deposition regardless of metal type. This universal approach eliminates the need for metal-specific blocking chemistries, as the reducing or neutral plasma environment inherently prevents unwanted reactions on all metallic surfaces while allowing desired deposition on dielectric surfaces
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the selective deposition of silicon-based dielectric layers with high precision and minimal process steps, achieving efficient film growth at moderate temperatures with improved selectivity and reduced complexity compared to existing methods.
Implementation Method 1
the patterned substrate is exposed to a non-oxidizing plasma
Implementation Method 2
forming a silicon-containing dielectric layer overlaying only the at least one non-metallic region of the patterned substrate via an atomic layer deposition process or a chemical vapor deposition process
Implementation Method 3
forming a silicon-containing dielectric layer overlaying only the at least one non-metallic region of the patterned substrate via an atomic layer deposition process
Data Source
AI summary
Processes for the inherently selective formation of silicon-containing films on various substrates are disclosed, which involve the use of precursors containing at least one oxygen atom and at least one silicon-nitrogen bond, and a non-oxidizing plasma.