Selective Silicon Oxide Plasma Deposition Without Passivation Damage
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Solution Overview
Problem
Current semiconductor manufacturing processes face challenges in selective deposition of silicon oxide-based materials, particularly due to plasma damage to passivation layers and oxidation of underlying metal surfaces, which affects the structural and chemical integrity of the deposited layers.
Innovation Solution
A method involving cyclic deposition processes using a metal or metalloid catalyst, alkoxy silane compounds, and plasma in a reaction chamber to selectively deposit silicon and oxygen on chemically distinct surfaces, with specific catalysts like trimethyl aluminum and plasma power control to maintain selectivity and prevent damage.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Productivity
If plasma is used to deposit silicon oxide-based materials, then deposition speed is improved, but passivation layers are damaged and selectivity is lost
Solution Approach 1:
The patent employs periodic action by implementing a cyclic deposition process that alternates between plasma exposure and non-plasma exposure phases. During plasma phases, silicon oxide is deposited at high speed, while during non-plasma phases, the passivation layer is allowed to recover and maintain its protective function. This periodic alternation enables sustained high deposition rates while preserving selectivity and preventing cumulative plasma damage to the passivation layer.
Solution Approach 2:
The patent applies preliminary action by pre-forming a passivation layer on surfaces where silicon oxide deposition should be prevented before the deposition process begins. This passivation layer is specifically designed to be resistant to plasma damage during the deposition phases, thereby maintaining selectivity throughout the cyclic process. The preliminary passivation prevents unwanted oxidation of underlying metal surfaces and ensures that deposition occurs only on intended surfaces.
2Manufacturing precision
If strong oxidizers are used to form silicon oxide, then deposition quality is improved, but underlying metal surfaces are oxidized
Solution Approach 1:
The patent implements local quality by creating spatially selective oxidation conditions through the cyclic deposition process. During plasma phases, oxidizing conditions are localized only to surfaces without passivation (where silicon oxide deposition is desired), while passivated surfaces are protected from oxidation. The periodic interruption of plasma allows the passivation layer to maintain its protective function, ensuring that metal surfaces underneath remain unoxidized while achieving high-quality silicon oxide deposition on exposed surfaces.
3Reliability
If conventional patterning is used to deposit different materials, then material selectivity is achieved, but processing steps increase
Solution Approach 1:
The patent applies the taking out principle by extracting and eliminating the need for separate conventional patterning steps through selective deposition. By using surface-specific cyclic deposition processes that inherently deposit materials only on certain surfaces based on their chemical properties, the method removes the requirement for additional photolithography and etching patterning steps. The selectivity is built into the deposition process itself, thereby reducing overall processing complexity while maintaining material selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enhances the selectivity and integrity of silicon and oxygen deposition, reducing plasma damage and oxidation, thereby improving the cost-effectiveness and scalability of semiconductor device manufacturing.
Implementation Method 1
providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface
Implementation Method 2
providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase
Implementation Method 3
providing a metal or metalloid catalyst into the reaction chamber in a vapor phase
Data Source
AI summary
Methods and vapor deposition assemblies of selectively depositing material comprising silicon and oxygen on a first surface of a substrate relative to a second surface of the substrate by a cyclic deposition process are disclosed. The methods comprise providing a substrate into a reaction chamber, providing a metal or metalloid catalyst into the reaction chamber in a vapor phase, providing a silicon precursor comprising an alkoxy silane compound into the reaction chamber in a vapor phase and providing a plasma into the reaction chamber to form a reactive species for forming a material comprising silicon and oxygen on the first surface. The methods may comprise subcycles for, for example, adjusting the proportions of material components.