Selective SiO2 Deposition via Alcohol Pretreatment
Solution Overview
Problem
As semiconductor device sizes decrease, the complexity of manufacturing increases, and the critical dimension of patterned features becomes challenging to produce, requiring new methods for selective film deposition on different material surfaces that are cost-effective and efficient.
Innovation Solution
The method involves providing a substrate with a dielectric material and a metal layer, pretreating it with an alcohol solution to remove the oxidized metal layer, and then exposing it to a silanol gas or a reactant gas to selectively deposit a SiO2 film, using a metal-containing catalyst layer to catalyze the deposition process.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional deposition methods are used to deposit films on metal layers and dielectric materials, then film deposition can be achieved, but selective deposition on different material surfaces becomes difficult as device size decreases
Solution Approach 1:
The patent applies preliminary action by performing surface pretreatment on the substrate before the deposition process. The substrate undergoes oxidation to form an oxidized layer, followed by selective removal of the oxidized metal layer using an alcohol solution. This preliminary preparation creates distinct surface characteristics that enable selective deposition in subsequent steps, resolving the contradiction by preparing the surface in advance to facilitate precise selective deposition without requiring complex in-situ control mechanisms
Solution Approach 2:
The patent uses an alcohol solution as an intermediary substance to selectively remove the oxidized metal layer while leaving the dielectric material intact. This intermediary chemical agent enables differentiation between metal and dielectric surfaces, allowing subsequent deposition processes to target specific materials selectively. The alcohol solution acts as a mediator that creates the necessary surface conditions for high-precision selective deposition without adding complex deposition control mechanisms
2Manufacturing precision
If the oxidized metal layer is retained on the metal layer, then the metal layer is protected, but it prevents selective deposition of SiO2 film on the dielectric material
Solution Approach 1:
The patent applies the extraction principle by selectively removing the oxidized metal layer using an alcohol solution treatment. This extraction process eliminates the barrier that would prevent selective SiO2 deposition on the dielectric material. By taking out the oxidized metal layer while preserving the underlying metal layer (protected by the catalyst layer), the patent enables precise selective deposition on dielectric surfaces without compromising metal layer integrity
Solution Approach 2:
The oxidized metal layer serves as a temporary, disposable protective layer that is intentionally created and then selectively removed. This short-living oxidized layer provides initial protection during processing but is deliberately eliminated to enable subsequent selective deposition. The underlying metal layer is protected throughout by the metal-containing catalyst layer, which replaces the oxidized layer after its temporary protective function is complete
3Manufacturing precision
If a metal-containing catalyst layer is coated on the metal layer, then selective deposition can be enabled, but an additional process step is added
Solution Approach 1:
The patent merges multiple functions into the metal-containing catalyst layer. This single layer serves as both a protective barrier for the metal layer and a catalytic surface that enables selective SiO2 deposition on the dielectric material. By combining protection and catalysis functions in one layer, the patent achieves selective deposition capability without proportionally increasing process complexity, as the catalyst layer integrates multiple roles that would otherwise require separate components
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach enables selective and efficient deposition of SiO2 films and dielectric laminate films, improving the resolution of patterned features and reducing production costs by ensuring precise film deposition on dielectric materials relative to metal layers.
Implementation Method 1
treating the substrate with an alcohol solution that removes the oxidized metal layer from the metal layer
Implementation Method 2
exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 film on the metal-containing catalyst layer
Implementation Method 3
exposing the substrate to a reactant gas containing a molecule that forms self-assembled monolayers (SAMs) on the substrate
Implementation Method 4
exposing the substrate to hydrogen gas excited by a plasma source
Data Source
AI summary
Methods are provided for selective film deposition. One method includes providing a substrate containing a dielectric material and a metal layer, the metal layer having an oxidized metal layer thereon, coating the substrate with a metal-containing catalyst layer, treating the substrate with an alcohol solution that removes the oxidized metal layer from the metal layer along with the metal-containing catalyst layer on the oxidized metal layer, and exposing the substrate to a process gas containing a silanol gas for a time period that selectively deposits a SiO2 film on the metal-containing catalyst layer on the dielectric material.