Selective Substrate Film Deposition Using Incubation-Time Control
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Solution Overview
Problem
Existing semiconductor manufacturing processes face challenges in selectively forming films on specific surfaces of substrates with different materials, as existing methods lack precision in controlling the formation and removal of substances on conductive and non-conductive surfaces.
Innovation Solution
A method involving a substrate processing apparatus that uses a first gas and a first reaction gas to form and remove a substance containing a first element on a substrate, with controlled incubation times and supply conditions to preferentially form the film on a conductive surface over a non-conductive surface, utilizing a cycle of gas supply and reaction to achieve selective film formation.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If a film is formed on both surfaces of a substrate using conventional methods, then the film formation process is simple, but the selectivity between different surfaces is poor
Solution Approach 1:
The gas supply process is segmented into distinct phases: a first gas is supplied to form substance X, then a first reaction gas is supplied to remove substance X. This segmentation allows different surfaces (conductive vs. non-conductive) to undergo different chemical processes at different times, achieving selective film formation without requiring complex spatial differentiation of the gas supply system
Solution Approach 2:
The patent employs periodic action through sequential gas supply cycles. The first gas is supplied for a controlled duration to form substance X, followed by a reaction gas supply phase where substance X is removed. By controlling the timing and duration of each gas supply phase, selective film formation is achieved on conductive surfaces while preventing film formation on non-conductive surfaces through periodic removal of substance X
2Manufacturing precision
If the incubation time of the first gas is extended to ensure complete film formation, then the film coverage is improved, but the film forms on both conductive and non-conductive surfaces reducing selectivity
Solution Approach 1:
The patent applies preliminary action by forming substance X on all surfaces first through controlled incubation of the first gas, then subsequently removing substance X from non-conductive surfaces through reaction with the first reaction gas. This two-stage approach ensures complete initial coverage while achieving final selectivity through the preliminary formation followed by selective removal
Solution Approach 2:
The patent converts the harmful effect of substance X forming on non-conductive surfaces into a beneficial process. The substance X that initially forms on non-conductive surfaces is subsequently reacted with and removed by the first reaction gas. This transforms the potential defect (unwanted film formation) into a controlled intermediate step that enables selective film formation on the desired conductive surfaces
3Productivity
If the first reaction gas is supplied simultaneously with the first gas, then the process efficiency is improved, but the selectivity of film formation is reduced
Solution Approach 1:
The patent uses periodic action by sequentially supplying gases rather than simultaneously. The first gas is supplied for a defined period to form substance X, then the first reaction gas is supplied in a subsequent period to remove substance X from non-conductive surfaces. This temporal separation maintains processing efficiency while achieving the necessary selectivity that simultaneous supply cannot provide
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach allows for the selective formation of a film on the conductive surface while minimizing its formation on the non-conductive surface, enhancing the selectivity and uniformity of the film thickness, and preventing damage to the non-conductive surface.
Implementation Method 1
supplying a first gas containing the first element to the substrate to form a substance X containing the first element on the at least a portion of the substrate
Implementation Method 2
supplying a first reaction gas, which reacts with the substance X, to the substrate, wherein at least a portion of the substance X formed on the substrate is removed
Data Source
AI summary
There is provided a technique that includes forming a film containing a first element on at least a portion of a substrate having a first surface and a second surface, which are made of different substances, by performing a first cycle a first number of times, the first cycle including non-simultaneously performing: (a1) supplying a first gas containing the first element to the substrate to form a substance X containing the first element on the at least a portion of the substrate; and (a2) supplying a first reaction gas, which reacts with the substance X, to the substrate, wherein an incubation time of the first gas on the second surface is longer than an incubation time of the first gas on the first surface, and in (a1), at least a portion of the substance X formed on the substrate is removed.