Selective Substrate Surface Modification to Prevent Film Growth Rupture
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Solution Overview
Problem
Selective growth methods face challenges in maintaining high selectivity due to selection rupture, where film formation occurs on unintended bases, leading to decreased precision and increased costs in semiconductor manufacturing.
Innovation Solution
The use of a first modifier and a second modifier with specific functional groups to modify the surface of a substrate, preventing film formation on undesired bases by creating a chemically stable and sterically hindered surface, thereby enhancing selectivity.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If selective growth is continued to reduce costs and improve precision, then manufacturing precision is improved, but selectivity decreases due to local film formation on unintended bases
Solution Approach 1:
The patent applies preliminary action by performing surface modification with modifiers before the film formation process. The modifiers are supplied to the substrate surface in advance to create a controlled chemical state that prevents unwanted film growth on certain bases, thereby maintaining selectivity throughout subsequent selective growth operations.
Solution Approach 2:
The patent changes chemical parameters by introducing modifiers with specific functional groups that alter the surface chemistry of the substrate. These parameter changes in surface composition and chemical reactivity enable differential film formation on different bases, resolving the selectivity issue while maintaining manufacturing precision.
2Reliability
If modifiers with high functional group density are used to improve selectivity, then selectivity is improved, but device complexity increases
Solution Approach 1:
The patent applies segmentation by dividing the modification process into distinct steps with different modifiers (first modifier and second modifier) having different functional group densities. This segmented approach allows precise control over surface chemistry without requiring a single complex modifier, thereby managing process complexity while achieving high selectivity.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This approach effectively suppresses selection rupture, improving selectivity in selective growth by creating a surface with high abundance density of chemically stable functional groups and significant steric hindrance, inhibiting precursor gas adsorption and enhancing film formation precision.
Implementation Method 1
modifying a surface of a first base of a substrate by supplying a first modifier and a second modifier to a substrate
Implementation Method 2
forming a film on a surface of the second base by supplying a film-forming gas to the substrate
Implementation Method 3
forming a film on a surface of the second base by supplying a film-forming gas to the substrate
Data Source
AI summary
A substrate processing technique including: (a) modifying a first base surface of a substrate by supplying a first modifier and a second modifier to the substrate having a surface on which the first base and a second base are exposed, wherein the first modifier contains one or more atoms to which at least one first functional group and at least one second functional group are directly bonded, wherein the second modifier contains an atom to which at least one first functional group and at least one second functional group are directly bonded, and wherein the number of the at least one first functional group contained in one molecule of the second modifier is smaller than the number of the at least one first functional group contained in one molecule of the first modifier; and (b) forming a film on a second base surface by supplying film-forming gas to the substrate.