Selective Surface Modification Polymer for Semiconductor Lithography
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Solution Overview
Problem
Conventional methods for forming fine patterns in semiconductor devices with line widths less than 30 nm are limited by optical factors, making it difficult to achieve selective modification of base material surfaces using low-molecular materials like those requiring the Langmuir-Blodgett method.
Innovation Solution
A method involving a composition with a polymer having a functional group capable of forming a bond with silicon, applied as a coating film on a base material surface, followed by heating to enable selective and dense modification of silicon-containing regions, allowing for further microfabrication in semiconductor devices.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Ease of manufacture
If low-molecular materials are used for surface modification, then the Langmuir-Blodgett method can be employed, but the process becomes complex and less suitable for preexisting semiconductor manufacturing processes
Solution Approach 1:
The patent changes the molecular weight parameter of the modification material from low-molecular to polymer, enabling the use of spin coating instead of Langmuir-Blodgett method. This parameter change simplifies the manufacturing process by using a more common and easier-to-apply spin coating technique that is already established in semiconductor manufacturing.
Solution Approach 2:
The patent replaces the Langmuir-Blodgett method (a complex mechanical deposition process) with spin coating (a simpler centrifugal deposition process). This substitution eliminates the need for specialized equipment and complex procedural steps associated with Langmuir-Blodgett while achieving the same surface modification objective.
2Manufacturing precision
If conventional lithography methods are used, then existing processes can be maintained, but line widths less than 30 nm cannot be achieved due to optical factors
Solution Approach 1:
The patent applies surface modification as a preliminary action before lithography. By pre-modifying the base material surface with polymers of different affinities, the patent creates regions that will selectively attract or repel photoresist materials during subsequent lithography steps. This preliminary surface preparation enables fine pattern formation below the optical diffraction limit of conventional lithography.
Solution Approach 2:
The patent creates local quality differences on the base material surface by applying polymers with different chemical affinities to different regions. These localized surface property variations (hydrophilic vs. hydrophobic regions) guide the selective adhesion of photoresist materials, enabling precise pattern definition at sub-30nm scales that cannot be achieved by uniform lithographic exposure alone.
3Productivity
If spin coating is used for material application, then the process integrates well with preexisting semiconductor manufacturing, but low-molecular materials require Langmuir-Blodgett method instead
Solution Approach 1:
The patent changes the physical state parameter of the modification material from low-molecular (requiring Langmuir-Blodgett) to polymer form (compatible with spin coating). This parameter change enables the material to be dissolved in solvents and applied via spin coating, which is already integrated into semiconductor manufacturing workflows, thereby improving both productivity and ease of manufacture.
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
Enables easy, highly selective, and dense modification of surface regions containing silicon, suitable for advanced semiconductor device processing, facilitating further microfabrication and pattern formation.
Implementation Method 1
The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon
Implementation Method 2
The coating film is heated
Data Source
AI summary
A method for selectively modifying a base material surface, includes applying a composition on a surface of a base material to form a coating film. The coating film is heated. The base material includes a surface layer which includes a first region including silicon. The composition includes a first polymer and a solvent. The first polymer includes at an end of a main chain or a side chain thereof, a group including a first functional group capable of forming a bond with the silicon. The first region preferably contains a silicon oxide, a silicon nitride, or a silicon oxynitride. The base material preferably further includes a second region that is other than the first region and that contains a metal; and the method preferably further includes, after the heating, removing with a rinse agent a portion formed on the second region, of the coating film.