Selective Surface Modification for Semiconductor Patterning
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Solution Overview
Problem
Conventional methods for forming fine patterns in semiconductor devices with line widths less than 30 nm are limited by optical factors, and existing surface modification techniques using low-molecular materials are unsuitable for spin coating and have inferior heat resistance, while high-molecular materials face challenges due to steric hindrance.
Innovation Solution
A selective modification method involving surface treatments like oxidization and hydrophilization of base materials with silicon oxides, nitrides, or oxynitrides, followed by application of a nonphotosensitive composition containing a nitrogen-containing polymer and solvent, enabling convenient and selective modification of surface regions.
Engineering Contradictions & Design Principles
Engineering Contradiction Analysis
1Manufacturing precision
If conventional lithography methods are used for forming fine patterns, then existing manufacturing processes can be maintained, but line widths less than 30 nm cannot be achieved due to optical factors
Solution Approach 1:
The patent replaces conventional optical lithography with a bottom-up self-assembly approach using block copolymers. The mechanical/chemical self-organization of polymer blocks creates fine patterns without relying on optical limitations, enabling sub-30 nm feature sizes through spontaneous micelle formation rather than light-based patterning
Solution Approach 2:
The block copolymer system performs self-service through directed self-assembly, where the amphiphilic blocks spontaneously organize into micellar structures with nanoscale precision. The polymer chains automatically position themselves to minimize free energy, creating ordered patterns without external intervention during the pattern formation step
2Ease of manufacture
If low-molecular materials are used for surface modification, then easy and highly selective modification can be achieved, but spin coating is not suitable and heat resistance is inferior
Solution Approach 1:
The patent uses block copolymers composed of distinct functional blocks: one block provides heat resistance and structural stability, while the other block enables selective interaction with silicon-based surfaces. This composite structure combines the advantages of both low-molecular materials (selectivity) and high-molecular materials (heat resistance and spin-coatability) into a single macromolecular system
Solution Approach 2:
The patent changes the molecular weight and compositional parameters of the polymer system by using block copolymers with controlled block lengths and ratios. This parameter optimization allows the material to exhibit both low-molecular-like selectivity and high-molecular-like thermal stability, resolving the contradiction between ease of manufacture and heat resistance
3Temperature
If high-molecular materials are used for surface modification, then heat resistance is improved, but steric hindrance prevents efficient surface modification
Solution Approach 1:
The block copolymer exhibits local quality differentiation where different blocks have distinct functions: one block provides heat resistance through its thermal stability, while the other block with silicon-affine groups provides efficient surface modification capability. This local functional differentiation allows the single material to overcome steric hindrance while maintaining heat resistance
Applied Scientific Principles
This section explains which scientific principles are used to turn an abstract innovation direction into a practical engineering solution.
Function Achieved in This Case
This method allows for efficient and selective surface modification of semiconductor devices, improving microfabrication processes by enhancing the interaction between the polymer and silicon-based surface layers, thus supporting further miniaturization and heat resistance.
Implementation Method 1
enhancing the interaction between the polymer and silicon-based surface layers
Implementation Method 2
subjecting at least a part of a surface of a base material to at least one surface treatment selected from the group consisting of an oxidization treatment and a hydrophilization treatment
Implementation Method 3
subjecting at least a part of a surface of a base material to at least one surface treatment selected from the group consisting of an oxidization treatment and a hydrophilization treatment
Data Source
AI summary
A selective modification method of a base material surface includes subjecting at least a part of a surface of a base material to at least one surface treatment selected from the group consisting of an oxidization treatment and a hydrophilization treatment. The base material includes a surface layer and includes an oxide, a nitride or an oxynitride of silicon, or a combination thereof in a first region of the surface layer. A nonphotosensitive composition is applied directly or indirectly on the surface of the base material after the surface treatment. The nonphotosensitive composition includes: a first polymer containing a nitrogen atom; and a solvent. It is preferred that the base material contains a metal in a second region which is other than the first region of the surface layer. In the surface treatment step, an O2 plasma treatment is preferably conducted.